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KMM5364005BSWG-6

Description
EDO DRAM Module, 4MX36, 60ns, CMOS, SIMM-72
Categorystorage    storage   
File Size386KB,19 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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KMM5364005BSWG-6 Overview

EDO DRAM Module, 4MX36, 60ns, CMOS, SIMM-72

KMM5364005BSWG-6 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeSIMM
package instructionSIMM, SSIM72
Contacts72
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time60 ns
Other featuresCAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-XSMA-N72
memory density150994944 bit
Memory IC TypeEDO DRAM MODULE
memory width36
Number of functions1
Number of ports1
Number of terminals72
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX36
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeSIMM
Encapsulate equivalent codeSSIM72
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply5 V
Certification statusNot Qualified
refresh cycle4096
Maximum standby current0.003 A
Maximum slew rate0.3 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationSINGLE
DRAM MODULE
KMM5364005BSW/BSWG
KMM5364005BSW/BSWG EDO Mode
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
GENERAL DESCRIPTION
The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM
high density memory module. The Samsung KMM5364005B
consists of two CMOS 4Mx16bits and one CMOS Quad CAS
4Mx4bits DRAMs in TSOP packages mounted on a 72-pin
glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor
is mounted on the printed circuit board for each DRAM. The
KMM5364005B is a Single In-line Memory Module with edge
connections and is intended for mounting into 72 pin edge
connector sockets.
FEATURES
• Part Identification
- KMM5364005BSW(4K cycles/64ms Ref, TSOP, Solder)
- KMM5364005BSWG(4K cycles/64ms Ref, TSOP, Gold)
• Extended Data Out Mode Operation
• CAS-before-RAS & Hidden Refresh capability
• RAS-only refresh capability
• TTL compatible inputs and outputs
• Single +5V±10% power supply
• JEDEC standard PDpin & pinout
• PCB : Height(1000mil), single sided component
PERFORMANCE RANGE
Speed
-5
-6
t
RAC
50ns
60ns
t
CAC
13ns
15ns
t
RC
84ns
104ns
t
HPC
20ns
25ns
PIN CONFIGURATIONS
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Symbol
V
SS
DQ0
DQ18
DQ1
DQ19
DQ2
DQ20
DQ3
DQ21
Vcc
NC
A0
A1
A2
A3
A4
A5
A6
A10
DQ4
DQ22
DQ5
DQ23
DQ6
DQ24
DQ7
DQ25
A7
A11
Vcc
A8
A9
NC
RAS2
DQ26
DQ8
Pin
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Symbol
DQ17
DQ35
Vss
CAS0
CAS2
CAS3
CAS1
RAS0
NC
NC
W
NC
DQ9
DQ27
DQ10
DQ28
DQ11
DQ29
DQ12
DQ30
DQ13
DQ31
Vcc
DQ32
DQ14
DQ33
DQ15
DQ34
DQ16
NC
PD1
PD2
PD3
PD4
NC
Vss
PIN NAMES
Pin Name
A0 - A11
DQ0 - 35
W
RAS0, RAS2
CAS0 - CAS3
PD1 -PD4
Vcc
Vss
NC
Function
Address Inputs
Data In/Out
Read/Write Enable
Row Address Strobe
Column Address Strobe
Presence Detect
Power(+5V)
Ground
No Connection
PRESENCE DETECT PINS (Optional)
Pin
PD1
PD2
PD3
PD4
50NS
Vss
NC
Vss
Vss
60NS
Vss
NC
NC
NC
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.

KMM5364005BSWG-6 Related Products

KMM5364005BSWG-6 KMM5364005BSW-6 KMM5364005BSWG-5 KMM5364005BSW-5
Description EDO DRAM Module, 4MX36, 60ns, CMOS, SIMM-72 EDO DRAM Module, 4MX36, 60ns, CMOS, SIMM-72 EDO DRAM Module, 4MX36, 50ns, CMOS, SIMM-72 EDO DRAM Module, 4MX36, 50ns, CMOS, SIMM-72
Parts packaging code SIMM SIMM SIMM SIMM
package instruction SIMM, SSIM72 SIMM, SSIM72 SIMM, SSIM72 SIMM, SSIM72
Contacts 72 72 72 72
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
access mode FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO
Maximum access time 60 ns 60 ns 50 ns 50 ns
Other features CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH
I/O type COMMON COMMON COMMON COMMON
JESD-30 code R-XSMA-N72 R-XSMA-N72 R-XSMA-N72 R-XSMA-N72
memory density 150994944 bit 150994944 bit 150994944 bit 150994944 bit
Memory IC Type EDO DRAM MODULE EDO DRAM MODULE EDO DRAM MODULE EDO DRAM MODULE
memory width 36 36 36 36
Number of functions 1 1 1 1
Number of ports 1 1 1 1
Number of terminals 72 72 72 72
word count 4194304 words 4194304 words 4194304 words 4194304 words
character code 4000000 4000000 4000000 4000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C
organize 4MX36 4MX36 4MX36 4MX36
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code SIMM SIMM SIMM SIMM
Encapsulate equivalent code SSIM72 SSIM72 SSIM72 SSIM72
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096 4096
Maximum standby current 0.003 A 0.003 A 0.003 A 0.003 A
Maximum slew rate 0.3 mA 0.3 mA 0.33 mA 0.33 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V
surface mount NO NO NO NO
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location SINGLE SINGLE SINGLE SINGLE
Maker SAMSUNG - SAMSUNG SAMSUNG
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