技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DD800S17K3_B2
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
反向重复峰值电压
Repetitivepeakreversevoltage
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
I2t-值
I²t-value
最大额定值/MaximumRatedValues
T
vj
= 25°C
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
V
RRM
I
F
I
FRM
I²t
min.
I
F
= 800 A, V
GE
= 0 V
I
F
= 800 A, V
GE
= 0 V
T
vj
= 25°C
T
vj
= 125°C
V
F
I
RM
1700
800
1600
125
typ.
1,80
1,90
780
850
205
345
130
225
16,0
max.
2,20
V
V
A
A
µC
µC
mJ
mJ
V
A
A
kA²s
特征值/CharacteristicValues
正向电压
Forwardvoltage
反向恢复峰值电流
Peakreverserecoverycurrent
恢复电荷
Recoveredcharge
反向恢复损耗（每脉冲）
Reverserecoveryenergy
结－壳热阻
Thermalresistance,junctiontocase
壳－散热器热阻
Thermalresistance,casetoheatsink
I
F
= 800 A, - di
F
/dt = 4900 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 900 V
T
vj
= 125°C
V
GE
= -15 V
I
F
= 800 A, - di
F
/dt = 4900 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 900 V
T
vj
= 125°C
V
GE
= -15 V
I
F
= 800 A, - di
F
/dt = 4900 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 900 V
T
vj
= 125°C
V
GE
= -15 V
每个二极管/perdiode
每个二极管/perdiode
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
Q
r
E
rec
R
thJC
R
thCH
43,0 K/kW
K/kW
preparedby:WB
approvedby:PL
dateofpublication:2013-04-30
revision:2.2
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DD800S17K3_B2
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
模块基板材料
Materialofmodulebaseplate
内部绝缘材料
Internalisolation
爬电距离
Creepagedistance
电气间隙
Clearance
相对电痕指数
Comperativetrackingindex
壳－散热器热阻
Thermalresistance,casetoheatsink
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
最大结温
Maximumjunctiontemperature
在开关状态下温度
Temperatureunderswitchingconditions
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
端子联接扭距
Terminalconnectiontorque
重量
Weight
RMS, f = 50 Hz, t = 1 min.
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
如½与取得联系-散热片/terminaltoheatsink
如½与取得联系-如½与取得联系/terminaltoterminal
如½与取得联系-散热片/terminaltoheatsink
如½与取得联系-如½与取得联系/terminaltoterminal
每个模块/permodule
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
T
C
=25°C,每个开关/perswitch
逆变器,制动-斩波器/inverter,brake-chopper
逆变器,制动-斩波器/inverter,brake-chopper
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
V
ISOL
CTI
min.
R
thCH
L
sCE
R
AA'+CC'
T
vj max
T
vj op
T
stg
M
M
8,0
G
-
1050
10
Nm
g
-40
-40
4,25
1,8
4,0
AlSiC
AlN
32,2
19,1
> 400
typ.
8,00
25
0,37
-
-
150
125
125
5,75
2,1
max.
K/kW
nH
mΩ
°C
°C
°C
Nm
Nm
kV
mm
mm
DynamischeDatengelteninVerbindungmitFF800R17KE3Modul
DynamicdatavalidinconjunctionwithFF800R17KE3module
preparedby:WB
approvedby:PL
dateofpublication:2013-04-30
revision:2.2
2
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DD800S17K3_B2
初步数据
PreliminaryData
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
E
rec
=f(I
F
)
R
Gon
=Ω,V
CE
=900V
275
正向偏压特性二极管,逆变器（典型)
forwardcharacteristicofDiode,Inverter(typical)
I
F
=f(V
F
)
1600
1400
1200
1000
800
600
400
200
0
T
vj
= 25°C
T
vj
= 125°C
E
rec
, T
vj
= 125°C
250
225
200
175
E [mJ]
150
125
100
75
50
25
0
I
F
[A]
0,0
0,5
1,0
1,5
V
F
[V]
2,0
2,5
3,0
0
200
400
600
800 1000 1200 1400 1600
I
F
[A]
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
E
rec
=f(R
G
)
I
F
=800A,V
CE
=900V
300
275
250
225
200
E
rec
, T
vj
= 125°C
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
Z
thJC
=f(t)
100
Z
thJC
: Diode
150
125
100
75
50
25
0
0
2
4
6
8
10
R
G
[Ω]
12
14
16
18
Z
thJC
[K/kW]
175
E [mJ]
10
i:
1
2
3
4
r
i
[K/kW]: 8,6 8,6 17,2 8,6
τ
i
[s]:
0,01 0,04 0,09 0,2
1
0,001
0,01
t [s]
0,1
1
preparedby:WB
approvedby:PL
dateofpublication:2013-04-30
revision:2.2
3
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DD800S17K3_B2
初步数据
PreliminaryData
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
preparedby:WB
approvedby:PL
dateofpublication:2013-04-30
revision:2.2
4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DD800S17K3_B2
初步数据
PreliminaryData
½用条件和条款
½用条件和条款
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产品规格书中所描述的产品特性是被保证的，任½这种保证严格依照供货协议中所涉及的条件和条款。
除此之外，产品和产品的特性没有任½的保证
请注意安装及应用指南中的信息。
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Terms&Conditionsofusage
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preparedby:WB
approvedby:PL
dateofpublication:2013-04-30
revision:2.2
5
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