DNA30E2200PZ
High Voltage Standard Rectifier
V
RRM
I
FAV
V
F
=
=
=
2200 V
30 A
1.24 V
Single Diode
Part number
DNA30E2200PZ
Backside: anode
1
3
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very low forward voltage drop
●
Improved thermal behaviour
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
Package:
TO-263 (D2Pak-HV)
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130325a
© 2013 IXYS all rights reserved
DNA30E2200PZ
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.83
13.4
0.7
0.25
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
7
210
370
400
315
340
685
665
495
480
V
mΩ
K/W
K/W
W
A
A
A
A
A²s
A²s
A²s
A²s
pF
min.
typ.
max. non-repetitive reverse blocking voltage
max.
2300
2200
40
1.5
1.26
1.53
1.24
1.63
30
Unit
V
V
µA
mA
V
V
V
V
A
V
R
= 2200 V
V
R
= 2200 V
I
F
=
I
F
=
I
F
=
I
F
=
30 A
60 A
30 A
60 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
T
C
= 140°C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
C
J
junction capacitance
V
R
= 700 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130325a
© 2013 IXYS all rights reserved
DNA30E2200PZ
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
d
Spp/App
d
Spb/Apb
mounting force with clip
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
TO-263 (D2Pak-HV)
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-55
-55
-55
typ.
max.
35
175
150
150
Unit
A
°C
°C
°C
g
N
mm
mm
1.5
20
4.2
4.7
60
Product Marking
XXXXXXXXX
Part number
D
N
A
30
E
2200
PZ
=
=
=
=
=
=
=
Diode
High Voltage Standard Rectifier
(>= 2000V)
Current Rating [A]
Single Diode
Reverse Voltage [V]
TO-263AB (D2Pak) (2HV)
Part No.
Logo
Assembly Line
Date Code
Assembly Code
IXYS
Zyyww
000000
Ordering
Standard
Part Number
DNA30E2200PZ
Marking on Product
DNA30E2200PZ
Delivery Mode
Tape & Reel
Quantity
800
Code No.
514460
Similar Part
DNA30EM2200PZ
DNA30E2200PA
DNA30E2200FE
DNA30E2200IY
Package
TO-263AB (D2Pak) (2HV)
TO-220AC
i4-Pac (2HV)
TO-262 (I2Pak) (2HV)
Voltage class
2200
2200
2200
2200
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.83
10.2
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130325a
© 2013 IXYS all rights reserved
DNA30E2200PZ
Outlines TO-263 (D2Pak-HV)
Dim.
W
E
L1
c2
A
Supplier
Option
D
A1
1
3
4
e1
2x e
L
c
2x b2
10.92
(0.430)
2x b
E1
D2
A2
A
A1
A2
b
b2
c
c2
D
D1
D2
E
E1
e
e1
H
L
L1
W
mm (Inches)
Millimeter
Inches
min
max
min
max
4.06
4.83
0.160 0.190
typ. 0.10
typ. 0.004
2.41
0.095
0.51
0.99
0.020 0.039
1.14
1.40
0.045 0.055
0.40
0.74
0.016 0.029
1.14
1.40
0.045 0.055
8.38
9.40
0.330 0.370
8.00
8.89
0.315 0.350
2.3
0.091
9.65
10.41 0.380 0.410
6.22
8.50
0.245 0.335
2,54 BSC
0,100 BSC
4.28
0.169
14.61 15.88 0.575 0.625
1.78
2.79
0.070 0.110
1.02
1.68
0.040 0.066
typ.
typ.
0.040
0.002
0.02
0.0008
H
D1
3.05
(0.120)
All dimensions conform with
and/or within JEDEC standard.
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
1
9.02
(0.355)
Recommended min. foot print
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130325a
© 2013 IXYS all rights reserved
DNA30E2200PZ
Rectifier
60
300
10
3
V
R
= 0 V
T
VJ
= 45°C
40
250
I
F
[A]
20
T
VJ
= 150°C
T
VJ
= 125°C
T
VJ
= 25°C
0
0.5
1.0
1.5
2.0
I
FSM
[A]
200
T
VJ
= 150°C
T
VJ
= 45°C
It
[A s]
2
2
T
VJ
= 150°C
50 Hz, 80% V
RRM
150
0.001
10
2
0.01
0.1
1
1
2
3
4 5 6 7 8 910
V
F
[V]
Fig. 1 Forward current versus
voltage drop per diode
50
t [s]
Fig. 2 Surge overload current
t [ms]
2
Fig. 3 I t versus time per diode
40
R
thKA
=
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
40
30
P
tot
20
dc =
1
0.5
0.4
0.33
0.17
0.08
30
I
F(AV)M
20
[A]
10
[W]
10
dc =
1
0.5
0.4
0.33
0.17
0.08
0
0
10
20
30
0
25
50
75 100 125 150 175 200
0
0
25 50 75 100 125 150 175 200
I
F(AV)M
[A]
T
amb
[°C]
T
C
[°C]
Fig. 5 Max. forward current versus
case temperature
Fig. 4 Power dissipation vs. direct output current & ambient temperature
0.8
0.6
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
0.0003
0.0065
0.027
0.105
0.8
Z
thJC
0.4
1 0.03
2 0.072
3 0.131
4 0.367
5 0.1
[K/W]
0.2
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130325a
© 2013 IXYS all rights reserved
京公网安备 11010802033920号
EEWORLD
