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MT47H64M4BP-5EAT:B

Description
DDR DRAM, 64MX4, 0.6ns, CMOS, PBGA60, 8 X 12 MM, ROHS COMPLIANT, FBGA-60
Categorystorage    storage   
File Size2MB,129 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
Download Datasheet Parametric View All

MT47H64M4BP-5EAT:B Overview

DDR DRAM, 64MX4, 0.6ns, CMOS, PBGA60, 8 X 12 MM, ROHS COMPLIANT, FBGA-60

MT47H64M4BP-5EAT:B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instruction8 X 12 MM, ROHS COMPLIANT, FBGA-60
Contacts60
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B60
JESD-609 codee1
length12 mm
memory density268435456 bit
Memory IC TypeDDR DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals60
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature105 °C
Minimum operating temperature-40 °C
organize64MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA60,9X11,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum standby current0.005 A
Maximum slew rate0.23 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width8 mm
256Mb: x4, x8, x16 DDR2 SDRAM
Features
DDR2 SDRAM
MT47H64M4 – 16 Meg x 4 x 4 banks
MT47H32M8 – 8 Meg x 8 x 4 banks
MT47H16M16 – 4 Meg x 16 x 4 banks
Features
V
DD
= 1.8V ±0.1V, V
DDQ
= 1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
4 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Selectable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Industrial temperature (IT) option
Automotive temperature (AT) option
RoHS-compliant
Supports JEDEC clock jitter specification
Options
1
• Configuration
– 64 Meg x 4 (16 Meg x 4 x 4 banks)
– 32 Meg x 8 (8 Meg x 8 x 4 banks)
– 16 Meg x 16 (4 Meg x 16 x 4 banks)
• FBGA package (Pb-free)
– 60-ball FBGA (8mm x 12mm) x4, x8
– 84-ball FBGA (8mm x 14mm) x16
• FBGA package (lead solder)
– 60-ball FBGA (8mm x 12mm) x4, x8
– 84-ball FBGA (8mm x 14mm) x16
• Timing – cycle time
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
• Self refresh
– Standard
– Low-power
• Operating temperature
– Commercial (0°C T
C
+85°C)
– Industrial (–40°C T
C
+95°C;
–40°C T
A
+85°C)
– Automotive (–40°C T
C
, T
A
+105°C)
• Revision
Note:
Marking
64M4
32M8
16M16
BP
BG
FP
FG
-3
-37E
-5E
None
L
None
IT
AT
:B
1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on
www.micron.com
for
product offerings and availability.
Table 1: Key Timing Parameters
Data Rate (MT/s)
Speed Grade
-3
-37E
-5E
CL = 3
400
400
400
CL = 4
533
533
400
CL = 5
667
n/a
n/a
t
RC
(ns)
55
55
55
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. N 7/11 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
‹
2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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