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IDT71681LA25LB

Description
Standard SRAM, 4KX4, 25ns, CMOS, CQCC28, LCC-28
Categorystorage    storage   
File Size84KB,8 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

IDT71681LA25LB Overview

Standard SRAM, 4KX4, 25ns, CMOS, CQCC28, LCC-28

IDT71681LA25LB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeQLCC
package instructionLCC-28
Contacts28
Reach Compliance Codenot_compliant
ECCN code3A001.A.2.C
Maximum access time25 ns
I/O typeSEPARATE
JESD-30 codeS-CQCC-N28
JESD-609 codee0
length11.4554 mm
memory density16384 bit
Memory IC TypeSTANDARD SRAM
memory width4
Number of functions1
Number of ports1
Number of terminals28
word count4096 words
character code4000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize4KX4
Output characteristics3-STATE
ExportableNO
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQCCN
Encapsulate equivalent codeLCC28,.45SQ
Package shapeSQUARE
Package formCHIP CARRIER
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum seat height2.54 mm
Maximum standby current0.0001 A
Minimum standby current2 V
Maximum slew rate0.1 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
width11.4554 mm
CMOS STATIC RAMS
16K (4K x 4-BIT)
Separate Data Inputs and Outputs
Integrated Device Technology, Inc.
IDT71681SA/LA
IDT71682SA/LA
FEATURES:
• Separate data inputs and outputs
• IDT71681SA/LA: outputs track inputs during write mode
• IDT71682SA/LA: high-impedance outputs during write
mode
• High speed (equal access and cycle time)
— Military: 15/20/25/35/45/55/70/85/100ns (max.)
— Commercial: 15/20/25/35/45ns (max.)
• Low power consumption
• Battery backup operation—2V data retention (LA version
only)
• High-density 24-pin 300-mil Ceramic or Plastic DIP, 24-
pin CERPACK, and 28-pin leadless chip carrier
• Produced with advanced CMOS high-performance
technology
• CMOS process virtually eliminates alpha particle soft-
error rates
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT71681/IDT71682 are 16,384-bit high-speed static
RAMs organized as 4K x 4. They are fabricated using IDT’s
high-performance, high-reliability technology—CMOS. This
state-of-the-art technology, combined with innovative circuit
design techniques, provides a cost-effective approach for
high-speed memory applications.
Access times as fast as 15ns are available. These circuits
also offer a reduced power standby mode. When
CS
goes
HIGH, the circuit will automatically go to, and remain in, this
standby mode as long as
CS
remains HIGH. In the standby
mode, the devices consume less than 10µW, typically. This
capability provides significant system-level power and cooling
savings. The low-power (LA) versions also offer a battery
backup data retention capability where the circuit typically
consumes only 1µW operating off a 2V battery.
All inputs and outputs of the IDT71681/IDT71682 are TTL-
compatible and operate from a single 5V supply.
FUNCTIONAL BLOCK DIAGRAM
A
0
V
CC
ADDRESS
DECODER
A
11
16,384-BIT
MEMORY ARRAY
GND
D
4
D
3
D
2
D
1
I/O CONTROL
INPUT
DATA
CONTROL
Y
4
Y
3
Y
2
Y
1
WE
CS
IDT71682 ONLY
IDT71681 ONLY
2984 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1994
Integrated Device Technology, Inc.
MAY 1994
DSC-1018/3
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