WED3DG6418V75D1 datasheet, PDF

White Electronic Designs

128MB- 16Mx64 SDRAM UNBUFFERED

FEATURES

n

PC100 and PC133 compatible

Burst Mode Operation

Auto and Self Refresh capability

LVTTL compatible inputs and outputs

Serial Presence Detect with EEPROM

Fully synchronous: All signals are registered on the positive

edge of the system clock

Programmable Burst Lengths: 1, 2, 4, 8 or Full Page

3.3V

±

0.3V Power Supply

144 pin SO-DIMM JEDEC

WED3DG6418V-D1

ADVANCED*

DESCRIPTION

The WED3DG6418V is a 16Mx64 synchronous

DRAM module which consists of eight 16Mx8 SDRAM

components in TSOP II package, and one 2Kb EEPROM

in an 8 pin TSSOP package for Serial Presence Detect

which are mounted on a 144 pin SO-DIMM multilayer

FR4 Substrate.

* This product is under development, is not qualified or characterized and is subject to

change or cancellation without notice.

PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)

PINOUT

1

3

5

7

9

11

13

15

17

19

21

23

25

27

29

31

33

35

37

39

41

43

45

47

49

FRONT

V

SS

DQ0

DQ1

DQ2

DQ3

V

CC

DQ4

DQ5

DQ6

DQ7

V

SS

DQM0

DQM1

V

CC

A0

A1

A2

V

SS

DQ8

DQ9

DQ10

DQ11

V

CC

DQ12

DQ13

2

4

6

8

10

12

14

16

18

20

22

24

26

28

30

32

34

36

38

40

42

44

46

48

50

BACK

V

SS

DQ32

DQ33

DQ34

DQ35

V

CC

DQ36

DQ37

DQ38

DQ39

V

SS

DQM4

DQM5

V

CC

A3

A4

A5

V

SS

DQ40

DQ41

DQ42

DQ43

V

CC

DQ44

DQ45

51

53

55

57

59

FRONT

DQ14

DQ15

V

SS

NC

52

54

56

58

60

BACK

DQ46

DQ47

V

SS

NC

95

97

99

101

103

105

107

109

111

113

115

117

119

121

123

125

127

129

131

133

135

137

139

141

143

BACK

DQ21

DQ22

DQ23

V

CC

A6

A8

V

SS

A9

A10/AP

V

CC

DQM2

DQM3

V

SS

DQ24

DQ25

DQ26

DQ27

V

CC

DQ28

DQ29

DQ30

DQ31

V

SS

**SDA

V

CC

96

98

100

102

104

106

108

110

112

114

116

118

120

122

124

126

128

130

132

134

136

138

140

142

144

BACK

DQ53

DQ54

DQ55

V

CC

A7

BA0

V

SS

BA1

A11

V

CC

DQM6

DQM7

V

SS

DQ56

DQ57

DQ58

DQ59

V

CC

DQ60

DQ61

DQ62

DQ63

V

SS

**SCL

V

CC

PIN NAMES

A0 – A11

BA0-1

DQ0-63

CLK0, CK1

CKE0

CS0#

RAS#

CAS#

WE#

DQM0-7

V

CC

V

SS

SDA

SCL

DNU

NC

Address Input (Multiplexed)

Select Bank

Data Input/Output

Clock Input

Clock Enable Input

Chip Select Input

Row Address Strobe

Column Address Strobe

Write Enable

DQM

Power Supply (3.3V)

Ground

Serial Data I/O

Serial Clock

Do Not Use

No Connect

VOLTAGE KEY

61

63

65

67

69

71

73

75

77

79

81

83

85

87

89

91

93

CLK0

V

CC

RAS#

WE#

CS0#

NC

DNU

V

SS

NC

V

CC

DQ16

DQ17

DQ18

DQ19

V

SS

DQ20

62

64

66

68

70

72

74

76

78

80

82

84

86

88

90

92

94

CKE0

V

CC

CAS#

NC

CK1

V

SS

NC

V

CC

DQ48

DQ49

DQ50

DQ51

V

SS

DQ52

** These pins should be NC in the system which

does not support SPD.

White Electronic Designs Corp. reserves the right to change products or specifications without notice.

June 2003

Rev. 3

1

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

White Electronic Designs

FUNCTIONAL BLOCK DIAGRAM

½½½

WED3DG6418V-D1

ADVANCED

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½

½½

½

½½

½½½½½

½½

White Electronic Designs Corp. reserves the right to change products or specifications without notice.

June 2003

Rev. 3

2

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

White Electronic Designs

ABSOLUTE MAXIMUM RATINGS

Parameter

Voltage on any pin relative to V

SS

Voltage on V

CC

supply relative to V

SS

Storage Temperature

Power Dissipation

Short Circuit Current

Symbol

V

IN

, V

OUT

V

CC

, V

CCQ

T

STG

P

D

I

OS

Value

WED3DG6418V-D1

ADVANCED

Units

V

°C

W

mA

-1.0 ~ 4.6

-55 ~ +150

8

50

Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

RECOMMENDED DC OPERATING CONDITIONS

(Voltage Referenced to: V

SS

= 0V, T

A

≤

0°C

≤

+70°C)

Symbol

V

CC

V

IH

V

IL

V

OH

V

OL

I

LI

Min

3.0

2.0

-0.3

2.4

—

-10

Typ

3.3

3.0

—

Max

3.6

V

CCQ+0.3

0.8

—

0.4

10

Parameter

Supply Voltage

Input High Voltage

Input Low Voltage

Output High Voltage

Output Low Voltage

Input Leakage Current

Unit

V

µA

1

2

I

OH

= -2mA

I

OL

= -2mA

3

Note

Note: 1. V

IH

(max)= 5.6V AC. The overshoot voltage duration is ≤ 3ns.

2. V

IL

(min)= -2.0V AC. The undershoot voltage duration is ≤ 3ns.

3. Any input 0V ≤ V

IN

≤ V

CCQ

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

CAPACITANCE

(T

A

= 23°C, f = 1MHz, V

CC

= 3.3V, V

REF

=1.4V

±

200mV)

Parameter

Input Capacitance (A0-A12)

Input Capacitance (RAS#,CAS#,WE#)

Input Capacitance (CKE0)

Input Capacitance (CLK0, CK1)

Input Capacitance (CS0#)

Input Capacitance (DQM0-DQM7)

Input Capacitance (BA0-BA1)

Data Input/Output Capacitance (DQ0-DQ63)

Symbol

C

IN1

C

IN2

C

IN3

C

IN4

C

IN5

C

IN6

C

IN7

Cou

T

Max

45

25

21

25

12

45

12

Unit

pF

White Electronic Designs Corp. reserves the right to change products or specifications without notice.

June 2003

Rev. 3

3

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

White Electronic Designs

WED3DG6418V-D1

ADVANCED

OPERATING CURRENT CHARACTERISTICS

(V

CC

= 3.3V, T

A

= 0°C

≤

+70°C)

Conditions

Burst Length = 1

t

RC

≥

t

RC

(min)

I

OL

= 0mA

CKE

≤

V

IL

(max), t

CC

= 10ns

CKE & CLK

≤

V

IL

(max), t

CC

=

∞

CKE

≥

V

IH

(min), CS

≥

V

IH

(min), tcc =10ns

Input signals are charged one time during 20

CKE

≥

V

IH

(min), CLK

≤V

IL

(max), t

CC

=

∞

Input signals are stable

CKE

≥

V

IL

(max), t

CC

= 10ns

CKE & CLK

≤

V

IL

(max), t

CC

=

∞

CKE

≥

V

IH

(min), CS

≥

V

IH

(min), tcc = 10ns

Input signals are changed one time during 20ns

CKE

≥

V

IH

(min), CLK

≤

V

IL

(max), tcc =

∞

Input signals are stable

Io = mA

Page burst

4 Banks activated

t

CCD

= 2CLK

t

RC

≥

t

RC

(min)

CKE

≤

0.2V

1040

1760

20

Version

Parameter

Operating Current

(One bank active)

Precharge Standby Current

in Power Down Mode

Precharge Standby Current

in Non-Power Down Mode

Symbol

I

CC1

133

960

100

800

Units

mA

Note

1

I

CC2P

I

CC2PS

I

CC2N

I

CC2NS

I

CC3P

I

CC3PS

I

CC3N

I

CC3NS

I

CC4

20

160

mA

80

50

240

200

mA

Active Standby Current in

Power-Down Mode

Active Standby Current in

Non-Power Down Mode

Operating Current (Burst mode)

880

1520

mA

1

2

Refresh Current

Self Refresh Current

I

CC5

I

CC6

Notes: 1. Measured with outputs open.

2. Refresh period is 64ms.

3. Unless otherwise noticed, input swing level is CMOS (V

IH

/V

IL

= V

CCQ

/V

SSQ

)

White Electronic Designs Corp. reserves the right to change products or specifications without notice.

June 2003

Rev. 3

4

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

White Electronic Designs

Ordering Information

WED3DG6418V10D1

WED3DG6418V7D1

WED3DG6418V75D1

Speed

100MHz

133MHz

CAS Latency

CL=2

CL=3

WED3DG6418V-D1

ADVANCED

Note: For industrial temperature range product, add an "I" to the end of the part number.

PACKAGE DIMENSIONS

½½½½½½½½½

½½½½½½½½½½½½

½½½½

½½½½½

½½½

½½½½

½½

½½½½

½½½½½

½½½½

½½½½½

½½½½

½½½½½½

ALL DIMENSIONS ARE IN INCHES

White Electronic Designs Corp. reserves the right to change products or specifications without notice.

June 2003

Rev. 3

5

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	White Electronic Designs Corporation
package instruction	DIMM, DIMM144,32
Reach Compliance Code	unknown
access mode	FOUR BANK PAGE BURST
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N144
memory density	1073741824 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	144
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM144,32
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum standby current	0.02 A
Maximum slew rate	1.76 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

	WED3DG6418V75D1	WED3DG6418V75D1I	WED3DG6418V10D1I	WED3DG6418V7D1I
Description	Synchronous DRAM Module, 16MX64, CMOS, SODIMM-144	Synchronous DRAM Module, 16MX64, CMOS, SODIMM-144	Synchronous DRAM Module, 16MX64, CMOS, SODIMM-144	Synchronous DRAM Module, 16MX64, CMOS, SODIMM-144
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	White Electronic Designs Corporation	White Electronic Designs Corporation	White Electronic Designs Corporation	White Electronic Designs Corporation
package instruction	DIMM, DIMM144,32	DIMM,	DIMM,	DIMM,
Reach Compliance Code	unknown	unknown	unknow	unknow
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144
memory density	1073741824 bit	1073741824 bit	1073741824 bi	1073741824 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64	64	64
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	144	144	144	144
word count	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
organize	16MX64	16MX64	16MX64	16MX64
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
self refresh	YES	YES	YES	YES
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

WED3DG6418V75D1

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