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HB56SW1664DBD-7A

Description
EDO DRAM Module, 16MX64, 70ns, CMOS, SODIMM-144
Categorystorage    storage   
File Size353KB,33 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

HB56SW1664DBD-7A Overview

EDO DRAM Module, 16MX64, 70ns, CMOS, SODIMM-144

HB56SW1664DBD-7A Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
Parts packaging codeMODULE
package instructionDIMM, DIMM144,32
Contacts144
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time70 ns
I/O typeCOMMON
JESD-30 codeR-XDMA-N144
memory density1073741824 bit
Memory IC TypeEDO DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals144
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM144,32
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply3.3 V
Certification statusNot Qualified
refresh cycle8192
self refreshNO
Maximum standby current0.016 A
Maximum slew rate1.92 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.15 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch0.8 mm
Terminal locationDUAL
HB56SW1664DBD-6A/7A,
HB56SW1664DBC-6A/7A
128 MB EDO DRAM S.O.DIMM
16-Mword
×
64-bit, 8k/4k Refresh, 1 Bank Module
(16 Pieces of 16 M
×
4 Components)
ADE-203-851 (Z)
Preliminary
Rev.0.0
Nov. 5, 1997
Description
The HB56SW1664DBD is a 16M
×
64 dynamic RAM Small Outline Dual In-line Memory Module
(S.O.DIMM), mounted 16 pieces of 64-Mbit DRAM (HM5164405A) sealed in TCP package and 1 piece of
serial EEPROM (2-kbit) for Presence Detect (PD). The HB56SW1664DBC is a 16M
×
64 dynamic RAM
Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 16 pieces of 64-Mbit DRAM
(HM5165405A) sealed in TCP package and 1 piece of serial EEPROM (2-kbit) for Presence Detect (PD).
The HB56SW1664DBD, HB56SW1664DBC offer Extended Data Out (EDO) Page Mode as a high speed
access mode. An outline of the HB56SW1664DBD, HB56SW1664DBC is 144-pin Zig Zag Dual tabs
socket type compact and thin package. Therefore, the HB56SW1664DBD, HB56SW1664DBC make high
density mounting possible without surface mount technology.
The HB56SW1664DBD,
HB56SW1664DBC provide common data inputs and outputs. Decoupling capacitors are mounted on the
module board.
Features
144-pin Zig Zag Dual tabs socket type
Outline: 67.60 mm (Length)
×
29.21 mm (Height)
×
3.80 mm (Thickness)
Lead pitch: 0.80 mm
Single 3.3 V (+0.3 V/–0.15 V) supply
High speed
Access time: t
RAC
= 60/70 ns (max)
t
CAC
= 15/18 ns (max)
Low power dissipation
Active mode: 6.34/5.47 W (max) (HB56SW1664DBD)
9.22/8.06 W (max) (HB56SW1664DBC)
Standby mode (TTL): 115.2 mW (max)
(CMOS): 57.6 mW (max)
EDO page mode capability

HB56SW1664DBD-7A Related Products

HB56SW1664DBD-7A HB56SW1664DBC-6A HB56SW1664DBC-7A HB56SW1664DBD-6A
Description EDO DRAM Module, 16MX64, 70ns, CMOS, SODIMM-144 EDO DRAM Module, 16MX64, 60ns, CMOS, SODIMM-144 EDO DRAM Module, 16MX64, 70ns, CMOS, SODIMM-144 EDO DRAM Module, 16MX64, 60ns, CMOS, SODIMM-144
Parts packaging code MODULE MODULE MODULE MODULE
package instruction DIMM, DIMM144,32 DIMM, DIMM144,32 DIMM, DIMM144,32 DIMM, DIMM144,32
Contacts 144 144 144 144
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
access mode FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO
Maximum access time 70 ns 60 ns 70 ns 60 ns
I/O type COMMON COMMON COMMON COMMON
JESD-30 code R-XDMA-N144 R-XDMA-N144 R-XDMA-N144 R-XDMA-N144
memory density 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit
Memory IC Type EDO DRAM MODULE EDO DRAM MODULE EDO DRAM MODULE EDO DRAM MODULE
memory width 64 64 64 64
Number of functions 1 1 1 1
Number of ports 1 1 1 1
Number of terminals 144 144 144 144
word count 16777216 words 16777216 words 16777216 words 16777216 words
character code 16000000 16000000 16000000 16000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C
organize 16MX64 16MX64 16MX64 16MX64
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM DIMM
Encapsulate equivalent code DIMM144,32 DIMM144,32 DIMM144,32 DIMM144,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 8192 4096 4096 8192
self refresh NO NO NO NO
Maximum standby current 0.016 A 0.016 A 0.016 A 0.016 A
Maximum slew rate 1.92 mA 2.56 mA 2.24 mA 2.24 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3.15 V 3.15 V 3.15 V 3.15 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
surface mount NO NO NO NO
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location DUAL DUAL DUAL DUAL
Maker Hitachi (Renesas ) - Hitachi (Renesas ) Hitachi (Renesas )

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