HB56SW1664DBD-6A datasheet, PDF

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HB56SW1664DBD-6A: DescriptionEDO DRAM Module, 16MX64, 60ns, CMOS, SODIMM-144; Categorystorage storage; File Size353KB，33 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB56SW1664DBD-6A Overview

EDO DRAM Module, 16MX64, 60ns, CMOS, SODIMM-144

HB56SW1664DBD-6A Parametric

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
Parts packaging code	MODULE
package instruction	DIMM, DIMM144,32
Contacts	144
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	60 ns
I/O type	COMMON
JESD-30 code	R-XDMA-N144
memory density	1073741824 bit
Memory IC Type	EDO DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	144
word count	16777216 words
character code	16000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM144,32
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	NO
Maximum standby current	0.016 A
Maximum slew rate	2.24 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3.15 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.8 mm
Terminal location	DUAL

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HB56SW1664DBD-6A/7A,

HB56SW1664DBC-6A/7A

128 MB EDO DRAM S.O.DIMM

16-Mword

64-bit, 8k/4k Refresh, 1 Bank Module

(16 Pieces of 16 M

4 Components)

ADE-203-851 (Z)

Preliminary

Rev.0.0

Nov. 5, 1997

Description

The HB56SW1664DBD is a 16M

64 dynamic RAM Small Outline Dual In-line Memory Module

(S.O.DIMM), mounted 16 pieces of 64-Mbit DRAM (HM5164405A) sealed in TCP package and 1 piece of

serial EEPROM (2-kbit) for Presence Detect (PD). The HB56SW1664DBC is a 16M

64 dynamic RAM

Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 16 pieces of 64-Mbit DRAM

(HM5165405A) sealed in TCP package and 1 piece of serial EEPROM (2-kbit) for Presence Detect (PD).

The HB56SW1664DBD, HB56SW1664DBC offer Extended Data Out (EDO) Page Mode as a high speed

access mode. An outline of the HB56SW1664DBD, HB56SW1664DBC is 144-pin Zig Zag Dual tabs

socket type compact and thin package. Therefore, the HB56SW1664DBD, HB56SW1664DBC make high

density mounting possible without surface mount technology.

The HB56SW1664DBD,

HB56SW1664DBC provide common data inputs and outputs. Decoupling capacitors are mounted on the

module board.

Features

•

144-pin Zig Zag Dual tabs socket type



Outline: 67.60 mm (Length)

29.21 mm (Height)

3.80 mm (Thickness)



Lead pitch: 0.80 mm

•

Single 3.3 V (+0.3 V/–0.15 V) supply

•

High speed



Access time: t

RAC

= 60/70 ns (max)

CAC

= 15/18 ns (max)

•

Low power dissipation



Active mode: 6.34/5.47 W (max) (HB56SW1664DBD)

9.22/8.06 W (max) (HB56SW1664DBC)



Standby mode (TTL): 115.2 mW (max)

(CMOS): 57.6 mW (max)

•

EDO page mode capability

HB56SW1664DBD-6A Related Products

	HB56SW1664DBD-6A	HB56SW1664DBC-6A	HB56SW1664DBC-7A	HB56SW1664DBD-7A
Description	EDO DRAM Module, 16MX64, 60ns, CMOS, SODIMM-144	EDO DRAM Module, 16MX64, 60ns, CMOS, SODIMM-144	EDO DRAM Module, 16MX64, 70ns, CMOS, SODIMM-144	EDO DRAM Module, 16MX64, 70ns, CMOS, SODIMM-144
Parts packaging code	MODULE	MODULE	MODULE	MODULE
package instruction	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32
Contacts	144	144	144	144
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
Maximum access time	60 ns	60 ns	70 ns	70 ns
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144
memory density	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit
Memory IC Type	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE
memory width	64	64	64	64
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	144	144	144	144
word count	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	16MX64	16MX64	16MX64	16MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	4096	4096	8192
self refresh	NO	NO	NO	NO
Maximum standby current	0.016 A	0.016 A	0.016 A	0.016 A
Maximum slew rate	2.24 mA	2.56 mA	2.24 mA	1.92 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3.15 V	3.15 V	3.15 V	3.15 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Maker	Hitachi （Renesas ）	-	Hitachi （Renesas ）	Hitachi （Renesas ）

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