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BZX55B12R0G

Description
Zener Diode
CategoryDiscrete semiconductor    diode   
File Size223KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BZX55B12R0G Overview

Zener Diode

BZX55B12R0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
JESD-609 codee3
Terminal surfaceMatte Tin (Sn)
BZX55B2V4 thru BZX55B75
Taiwan Semiconductor
Small Signal Product
2% Tolerance Zener Diode
FEATURES
- Wide zener voltage range selection: 2.4V to 75V
- VZ Tolerance Selection of ± 2%
- Hermetically sealed glasss
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS compliant
- All external surfaces are corrosion resistant and
leads are readily solderable
- ESD rating 15KV per human body model
- Packing code with suffix "G" means
Halogen-free
DO-35
Hermetically Sealed Glass
MECHANICAL DATA
- Case: DO-35
- High temperature soldering guaranteed: 260
o
C/10s
- Polarity: Indicated by black cathode band
- Weight: 109 ± 4 mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Forward Voltage
I
F
= 10 mA
(Note 1)
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
SYMBO
P
D
V
F
R
θJA
T
J
, T
STG
VALUE
500
1
240
- 65 to +200
o
UNIT
mW
V
C/W
o
C
Note1: Valid provided that electrodes are kept at ambient temperature, and mount on PC board 50mm x 50mm x1.6mm
Zener I vs. V Characteristics
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Document Number: DS_S1410002
Version: E14

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