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GT40WR21

Description
Discrete IGBTs Silicon N-Channel IGBT
File Size126KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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GT40WR21 Overview

Discrete IGBTs Silicon N-Channel IGBT

GT40WR21
Discrete IGBTs
Silicon N-Channel IGBT
GT40WR21
1. Applications
Dedicated to Voltage-Resonant Inverter Switching Applications
The product(s) described herein should not be used for any other application.
Note:
2. Features
(1)
(2)
(3)
(4)
6.5th generation
The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.
Enhancement mode
High-speed switching
IGBT : t
f
= 0.15
µs
(typ.) (I
C
= 40 A)
FWD : t
rr
= 1.00
µs
(typ.) (I
F
= 15 A)
(5)
(6)
Low saturation voltage : V
CE(sat)
= 2.9 V (typ.) (I
C
= 40 A)
High junction temperature : T
j
= 175 (max)
3. Packaging and Internal Circuit
1: Gate
2: Collector
3: Emitter
TO-3P(N)
1
2012-06-05
Rev.1.0
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