PRELIMINARY DATA SHEET
2.7 GHz SILICON MIMIC
WIDE BAND AMPLIFIER
FEATURES
UPC2776T
GAIN vs. FREQUENCY
•
•
•
•
•
•
•
WIDE FREQUENCY RESPONSE:
2.7 GHz
FLAT GAIN RESPONSE:
±1.0
dB
HIGH GAIN:
23 dB
MEDIUM OUTPUT POWER:
P
1dB
: 6.0 dBm @ 1.0 GHz
Gain, G
S
(dB)
5 V SINGLE SUPPLY VOLTAGE
SMALL SURFACE MOUNT PACKAGE :
T06
TAPE AND REEL PACKAGING AVAILABLE
25
30
20
15
DESCRIPTION AND APPLICATIONS
The UPC2776T is a Silicon Monolithic integrated circuit
manufactured using the NESAT III process. This device is
suitable for wide band IF blocks due to its high gain and flat
response. The UPC2776T is designed as a low cost IC gain
stage in DBS, TVRO, PCS, WLAN and other communication
receivers.
10
0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(V
CC
= 5.0 V, T
A
= 25
°C,
Z
IN
= Z
OUT
= 50
Ω)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
Gs
f
U
∆G
S
P
1dB
NF
RL
IN
RL
OUT
ISOL
P
SAT
IM
3
R
TH
PARAMETERS AND CONDITIONS
Circuit Current (no signal)
Small Signal Gain, f = 1 GHz
Upper Limit Operating Frequency
(The gain at f
U
is 3 dB down from the gain at 0.1 GHz)
Gain Flatness, f = 0.1 ~ 2.0 GHz
Output Power at 1 dB Compression f = 1 GHz
Noise Figure, f = 1 GHz
Input Return Loss, f = 1 GHz
Output return Loss, f = 1 GHz
Isolation, f = 1 GHz
Saturated Output Power, f = 1 GHz
3rd Order Intermodulation Distortion, f = 1 GHz
P
O
= 0 dBm each tone, f
1
= 1000 MHz, f
2
= 1002 MHz
Thermal Resistance (Junction to Ambient)
UNITS
mA
dB
GHz
dB
dBm
dB
dB
dB
dB
dBm
dBc
°C/W
4.5
15
27
+4
MIN
18
21
2.3
UPC2776T
TO6
TYP
25
23
2.7
±1.0
+6.0
6.0
7.5
20
32
8.5
-30
200
7.5
MAX
33
26
California Eastern Laboratories
UPC2776T
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CC
I
CC
P
IN
P
T
T
OP
T
STG
PARAMETERS
Supply Voltage
Total Circuit Current
Input Power
Power Dissipation
2
Operating Temperature
Storage Temperature
UNITS
V
mA
dBm
mW
°C
°C
RATINGS
6
60
+10
280
-40 to +85
-55 to +150
RECOMMENDED
OPERATING CONDITIONS
SYMBOL
V
CC
PARAMETER
Supply Voltage
UNITS
V
MIN
4.5
TYP MAX
5.0
5.5
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 50 x 50 x 1.6 mm epoxy glass PWB (T
A
= +85
°C)
PIN FUNCTIONS
PIN
1
SYMBOL
INPUT
APPLIED
VOLTAGE
(v)
—
DESCRIPTION
RF signal input pin. An internal matching circuit,
configured with resistors, improves match to 50
Ω
over a wide band. A multi-feedback circuit is
incorporated to minimize variations in h
FE
and resistance values.
EQUIVALENT CIRCUIT
6
4
2
3
5
GND
0
Ground pin. Form the ground pattern as large as
possible to minimize ground impedance.
1
4
OUTPUT
4.5 - 5.5
RF signal output pin. Connect an inductor
between this pin and V
CC
to supply current
to the internal output transistors.
Power supply pin. This pin biases the internal
input transistor.
2
3
5
6
V
CC
TEST CIRCUIT
V
CC
1000 pF
300 nH
6
50
Ω
IN
C
1
1000 pF
2, 3, 5
1
4
L
C
2
1000 pF
50
Ω
OUT
UPC2776T
OUTLINE DIMENSIONS
(Units in mm)
UPC2776T
PACKAGE OUTLINE T06
+0.2
2.8 -0.3
+0.2
1.5 -0.1
LEAD CONNECTIONS
(Top View)
(Bottom View)
3
4
4
C2L
3
2
5
5
2
2.9±0.2
3
0.95
4
1
6
6
1
1.9±0.2 2
0.95
5
1
6
-0.05
0.3 +0.10
1. INPUT
2. GND
3. GND
4. OUTPUT
5. GND
6. V
CC
Note:
Package Markings
C2L: UPC2776T
+0.2
1.1 -0.1
0.8
0 to 0.1
0.13±0.1
Note:
All dimensions are typical unless otherwise specified.
ORDERING INFORMATION
PART NUMBER
UPC2776T-E3
QTY
3K/Reel
RECOMMENDED P.C.B. LAYOUT
(Units in mm)
3.10
3
4
0.95
2
5
1
6 0.5 MIN
1.0
MIN
1.0
MIN
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
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