UPD4481321GF-A75 datasheet, PDF

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UPD4481321GF-A75: Description8M-BIT ZEROSB SRAM FLOW THROUGH OPERATION; File Size291KB，28 Pages; ManufacturerNEC ( Renesas ); Websitehttps://www2.renesas.cn/zh-cn/

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UPD4481321GF-A75 Overview

8M-BIT ZEROSB SRAM FLOW THROUGH OPERATION

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DATA SHEET

MOS INTEGRATED CIRCUIT

PD4481161, 4481181, 4481321, 4481361

8M-BIT ZEROSB

SRAM

FLOW THROUGH OPERATION

Description

The

PD4481161 is a 524,288-word by 16-bit, the

PD4481181 is a 524,288-word by 18-bit, the

PD4481321 is a

262,144-word by 32-bit and the

PD4481361 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with

advanced CMOS technology using full CMOS six-transistor memory cell.

The

PD4481161,

PD4481181,

PD4481321 and

PD4481361 are optimized to eliminate dead cycles for read to

write, or write to read transitions. These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-bit

burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the

single clock input (CLK).

The

PD4481161,

PD4481181,

PD4481321 and

PD4481361 are suitable for applications which require

synchronous operation, high speed, low voltage, high density and wide bit configuration, such as buffer memory.

ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State

(“Sleep”). In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes

normal operation.

The

PD4481161,

PD4481181,

PD4481321 and

PD4481361 are packaged in 100-pin PLASTIC LQFP with a

1.4 mm package thickness for high density and low capacitive loading.

Features

•

Low voltage core supply : V

= 3.3 ± 0.165 V (-A65, -A75, -A85, -A65Y, -A75Y, -A85Y)

= 2.5 ± 0.125 V (-C75, -C85, -C75Y, -C85Y)

•

Synchronous operation

•

Operating temperature : T

= 0 to 70

°C

(-A65, -A75, -A85, -C75, -C85)

−40

+85 °C

(-A65Y, -A75Y, -A85Y, -C75Y, -C85Y)

•

100 percent bus utilization

•

Internally self-timed write control

•

Burst read / write : Interleaved burst and linear burst sequence

•

Fully registered inputs and outputs for flow through operation

•

All registers triggered off positive clock edge

•

3.3V or 2.5V LVTTL Compatible : All inputs and outputs

•

Fast clock access time : 6.5 ns (133 MHz), 7.5 ns (117 MHz), 8.5 ns (100 MHz)

•

Asynchronous output enable : /G

•

Burst sequence selectable : MODE

•

Sleep mode : ZZ (ZZ = Open or Low : Normal operation)

•

Separate byte write enable : /BW1 to /BW4 (

PD4481321 and

PD4481361)

/BW1 and /BW2 (

PD4481161 and

PD4481181)

•

Three chip enables for easy depth expansion

•

Common I/O using three state outputs

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M15561EJ3V0DS00 (3rd edition)

Date Published December 2002 NS CP(K)

Printed in Japan

The mark

shows major revised points.

2001

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