PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µ
PA806T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
FEATURES
• Low Noise, High Gain
• Operable at Low Voltage
• Small Feed-back Capacitance
C
re
= 0.4 pF TYP.
• Built-in 2 Transistors (2
×
2SC4959)
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
0.65 0.65
2.0±0.2
1.3
2
ORDERING INFORMATION
PART NUMBER
QUANTITY
Loose products
(50 PCS)
PACKING STYLE
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
3
0.9±0.1
µ
PA806T
0.7
4
5
µ
PA806T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
PIN CONFIGURATION (Top View)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
RATING
9
6
2
30
150 in 1 element
200 in 2
Junction Temperature
Storage Temperature
T
j
T
stg
elements
Note
150
–65 to +150
˚C
˚C
UNIT
V
V
V
mA
mW
6
Q
1
5
0~0.1
4
Q
2
1
2
3
PIN CONNECTIONS
4. Emitter (Q2)
1. Collector (Q1)
5. Base (Q2)
2. Emitter (Q1)
6. Base (Q1)
3. Collector (Q2)
Note
110 mW must not be exceeded in 1 element.
The information in this document is subject to change without notice.
Document No. ID-3640
(O.D. No. ID-9147)
Date Published April 1995 P
Printed in Japan
©
0.15
–0
+0.1
0.2
–0
1
6
+0.1
X Y
1995
µ
PA806T
ELECTRICAL CHARACTERISTICS (T
A
= 25
°C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
h
FE
Ratio
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21
|
2
NF
h
FE1
/h
FE2
CONDITION
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 10 mA
Note 1
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 10 mA
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
0.85
7
75
12
0.4
8.5
1.5
2.5
0.7
MIN.
TYP.
MAX.
0.1
0.1
150
GHz
pF
dB
dB
UNIT
µ
A
µ
A
Notes 1.
Pulse Measurement: Pw
≤
350
µ
s, Duty cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
KB
T83
75 to 150
TYPICAL CHARACTERISTICS (T
A
= 25
°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
50
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 3 V
Total Power Dissipation P
T
(mW)
Free Air
200
Collector Current I
C
(mA)
100
150
2
40
El
em
rE
Pe
en
t
si
n
t
30
lem
To
100
en
ta
l
20
10
0
50
0
0.5
Base to Emitter Voltage V
BE
(V)
1.0
Ambient Temperature T
A
(°C)
2
µ
PA806T
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
500
µA
Collector Current I
C
(mA)
50
40
30
200
µA
20
10
0
0.1 0.2
Collector to Emitter Voltage V
CE
(V)
I
B
= 100
µA
DC Current Gain h
FE
400
µA
300
µA
200
DC CURRENT GAIN vs.
COLLECTOR CURRENT
5V
V
CE
= 3 V
100
0
0.5
1
2
5
10 20
50 100
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
14
Gain Bandwidth Product f
T
(GHz)
12
10
8
V
CE
= 1 V
6
4
2
0.5
Insertion Power Gain l S
21e
l
2
(dB)
f = 2 GHz
5V
3V
10
INSERTION GAIN vs.
COLLECTOR CURRENT
f = 2 GHz
5V
8
3V
V
CE
= 1 V
6
4
2
1
2
5
10
20
50
1
2
5
10
20
50
Collector Current I
C
(mA)
Collector Current I
C
(mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
4
Feed-back Capacitance C
re
(pF)
f = 2 GHz
V
CE
= 3 V
Noise Figure NF (dB)
3
0.6
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1 MHz
0.5
2
0.4
1
0.3
0
0.5
1
2
5
10
20
50
0.2
0.5
1
2
5
10
20
Collector Current I
C
(mA)
Collector to Base Voltage V
CB
(V)
3
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
