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UPA835

Description
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
File Size58KB,12 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA835 Overview

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µ
PA835TC
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
DESCRIPTION
The
µ
PA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to
UHF band.
FEATURES
• Low noise
Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, V
CE
= 3 V, I
C
= 3 mA
Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
• High gain
Q1 :
|S
21e
|
2
= 8.5 dB TYP. @ f = 2 GHz, V
CE
= 3 V, I
C
= 10 mA
Q2 :
|S
21e
|
2
= 9.0 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
• Flat-lead 6-pin thin-type ultra super minimold package
• Built-in 2 different transistors (2SC5010, 2SC5006)
BUILT-IN TRANSISTORS
Q1
3-pin ultra super minimold part No.
2SC5010
Q2
2SC5006
ORDERING INFORMATION
Part Number
Package
Flat-lead 6-pin
thin-type ultra
super minimold
Quantity
Loose products
(50 pcs)
Taping products
(3 kp/reel)
Supplying Form
8 mm wide embossed tape.
Pin 6 (Q1 Base), pin 5 (Q2 Emitter), pin 4 (Q2 Base) face to perforation
side of the tape.
µ
PA835TC
µ
PA835TC-T1
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
µ
PA835TC.)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14555EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1999

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Description NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
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