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UPD4416004G5-A17-9JF

Description
16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT
File Size74KB,12 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPD4416004G5-A17-9JF Overview

16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT

DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD4416004
16M-BIT CMOS FAST SRAM
4M-WORD BY 4-BIT
Description
The
µ
PD4416004 is a high speed, low power, 16,777,216 bits (4,194,304 words by 4 bits) CMOS static RAM.
Operating supply voltage is 3.3 V
±
0.3 V.
The
µ
PD4416004 is packaged in a 54-PIN PLASTIC TSOP (II).
Features
4,194,304 words by 4 bits
Fast access time : 15, 17 ns (MAX.)
Output Enable input for easy application
Ordering Information
Part number
Package
Supply voltage
V
Access time
(MAX.) ns
15
17
Supply current (MAX.)
At operating mA
220
210
At standby mA
10
µ
PD4416004G5-A15-9JF
µ
PD4416004G5-A17-9JF
54-PIN PLASTIC TSOP (II)
(10.16 mm (400))
3.3
±
0.3
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14078EJ4V0DS00 (4th edition)
Date Published December 2000 NS CP(K)
Printed in Japan
The mark
shows major revised points.
©
1999

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Description 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT
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