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UPD4416001G5-A17-9JF

Description
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT
File Size75KB,12 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPD4416001G5-A17-9JF Overview

16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT

DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD4416001
16M-BIT CMOS FAST SRAM
16M-WORD BY 1-BIT
Description
The
µ
PD4416001 is a high speed, low power, 16,777,216 bits (16,777,216 words by 1 bits) CMOS static RAM.
Operating supply voltage is 3.3 V
±
0.3 V.
The
µ
PD4416001 is packaged in a 54-PIN PLASTIC TSOP (II).
Features
16,777,216 words by 1 bits
Fast access time : 15, 17 ns (MAX.)
Output Enable input for easy application
Ordering Information
Part number
Package
Supply voltage
V
Access time
ns (MAX.)
15
17
Supply current mA (MAX.)
At operating
165
160
At standby
10
µ
PD4416001G5-A15-9JF
µ
PD4416001G5-A17-9JF
54-PIN PLASTIC TSOP (II)
(10.16 mm (400))
3.3
±
0.3
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14077EJ3V0DS00 (3rd edition)
Date Published December 2000 NS CP(K)
Printed in Japan
The mark
shows major revised points.
©
1999

UPD4416001G5-A17-9JF Related Products

UPD4416001G5-A17-9JF UPD4416001 UPD4416001G5-A15-9JF
Description 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT

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