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ISL6146AFRZ-T7A

Description
BUF OR INV BASED MOSFET DRIVER, PDSO8
Categorysemiconductor    Analog mixed-signal IC   
File Size2MB,28 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
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ISL6146AFRZ-T7A Overview

BUF OR INV BASED MOSFET DRIVER, PDSO8

ISL6146AFRZ-T7A Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Minimum operating temperature-40 Cel
Maximum operating temperature125 Cel
Processing package description3 X 3 MM, ROHS COMPLIANT, PLASTIC, DFN-8
stateActive
Interface TypeBUFFER OR INVERTER BASED MOSFET DRIVER
high end driverNO
jesd_30_codeS-PDSO-N8
jesd_609_codee3
Packaging MaterialsPLASTIC/EPOXY
ckage_codeHVSON
packaging shapeSQUARE
Package SizeSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
seated_height_max1 mm
Rated supply voltage12 V
Minimum supply voltage3 V
Maximum supply voltage20 V
surface mountYES
Temperature levelAUTOMOTIVE
terminal coatingMATTE TIN
Terminal formNO LEAD
Terminal spacing0.6500 mm
Terminal locationDUAL
length3 mm
width3 mm
DATASHEET
ISL6146
Low Voltage OR-ing FET Controller
The
ISL6146
represents a family of OR-ing MOSFET controllers
capable of OR-ing voltages from 1V to 18V. Together with suitably
sized N-channel power MOSFETs, the ISL6146 increases power
distribution efficiency when replacing a power OR-ing diode in high
current applications. It provides gate drive voltage for the
MOSFET(s) with a fully integrated charge pump.
The ISL6146 allows users to adjust with external resistor(s) the
V
OUT
- V
IN
trip point, which adjusts the control sensitivity to system
power supply noise. An open drain FAULT pin will indicate if a
conditional or FET fault has occurred.
The ISL6146A and ISL6146B are optimized for very low voltage
operation, down to 1V with an additional independent bias of 3V
or greater.
The ISL6146C provides a voltage compliant mode of operation
down to 3V with programmable undervoltage lock out and
overvoltage protection threshold levels.
The ISL6146D and ISL6146E are like the ISL6146A and ISL6146B
respectively, but do not have conduction state reporting via the
fault output
.
TABLE 1. KEY DIFFERENCES BETWEEN PARTS IN FAMILY
PART
NUMBER
ISL6146A
ISL6146B
ISL6146C
ISL6146D
ISL6146E
KEY DIFFERENCES
Separate BIAS and V
IN
with Active High Enable
Separate BIAS and V
IN
with Active Low Enable
V
IN
with OVP/UVLO Inputs
ISL6146A without Conduction Monitor and Reporting
ISL6146B without Conduction Monitor and Reporting
FN7667
Rev 5.00
Aug 17, 2015
Features
• OR-ing down to 1V and up to 20V with ISL6146A, ISL6146B,
ISL6146D and ISL6146E
• Programmable voltage compliant operation with ISL6146C
• V
IN
hot swap transient protection rating to +24V
• High speed comparator provides fast <0.3µs turn-off in
response to shorts on sourcing supply
• Fastest reverse current fault isolation with 6A turn-off
current
• Very smooth switching transition
• Internal charge pump to drive N-channel MOSFET
• User programmable V
IN
- V
OUT
Vth for noise immunity
• Open-drain FAULT output with delay
- Short between any two of the OR-ing FET terminals
- GATE voltage and excessive FET V
DS
- Power-good indicator (ISL6146C)
• MSOP and DFN package options
Applications
• N+1 industrial and telecom power distribution systems
• Uninterruptable power supplies
• Low voltage processor and memory
• Storage and datacom systems
Q1
+
VIN GATE VOUT
BIAS
ADJ
ISL6146B
FLT
GND
-
Q2
+
VIN GATE VOUT
VOUT
BIAS
ADJ
ISL6146B
FLT
GND
-
EN
EN
+
C
O
M
M
O
N
P
O
W
E
R
B
U
S
+C
O
M
M
O
N
P
O
W
E
R
B
U
S
GATE FAST OFF, ~200ns FALL TIME
~70ns FROM 20V TO 12.6V ACROSS 57nF
GATE OUTPUT SINKING ~ 6A
VOLTAGE
DC/DC
(3V - 20V)
VOLTAGE
DC/DC
(3V - 20V)
FIGURE 1. TYPICAL APPLICATION
FIGURE 2. ISL6146 GATE HIGH CURRENT PULL-DOWN
FN7667 Rev 5.00
Aug 17, 2015
Page 1 of 28
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