2N5550M1TA datasheet, PDF - EEWORLD Datasheet

2N5550M1TA: DescriptionSmall Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size52KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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2N5550M1TA Overview

Small Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3

Parameter Name	Attribute value
Parts packaging code	TO-92
package instruction	SMALL OUTLINE, R-PSSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	140 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JESD-30 code	R-PSSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Base Number Matches	1

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