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BR2506-G

Description
BRIDGE DIODE 10A 1000V BR
Categorysemiconductor    Discrete semiconductor   
File Size157KB,2 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Download Datasheet View All

BR2506-G Overview

BRIDGE DIODE 10A 1000V BR

Silicon Bridge Rectifiers
BR10/15/25/35/50A -G SERIES
"-G" : RoHS Device
REVERSE VOLTAGE
- 50
to
1000V
FORWARD CURRENT
- 10/15/25/35/50
A
BR
METAL HEAT SINK
.442(11.23)
.424(10.77)
.925(23.5)
.886(22.5)
0.94
(2.4)
diam
.254(6.45)
.242(6.15)
1.133(28.8)
1.114(28.3)
.661(16.8)
.648(16.4)
FEATURES
- Surge
overload -240~500amperes peak
- Low
forward voltage drop
- Mounting
position: Any
- Electrically
isolated base -2000 Volts
- Solderable
0.25" FASTON terminals
- Materials
used carries U/L recognition
.035(0.9)
.028(0.7)
Hole for
No.8 screw
193"(4.9)diam
.720(18.3)
.705(17.9)
.661(16.8)
.648(16.4)
1.133(28.8)
1.114(28.3)
.571(14.5)
.555(14.1)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25c℃ ambient temperature unless otherwise specified.
Resistive or inductive load 60H
Z
.
For capacitive load current by 20%
BR
10005
BR
1001
1501
2501
3501
5001
100
70
10
BR
10
240
BR
15
BR
1002
1502
2502
3502
5002
200
140
15
300
BR
25
BR
1004
1504
2504
3504
5004
400
280
25
400
BR
35
BR
1006
1506
2506
3506
5006
600
420
BR
1008
1508
2508
3508
5008
800
560
35
400
BR
50
BR
1010
1510
2510
3510
5010
1000
700
50
500
V
V
A
UNIT
CHARACTERISTICS
SYMBOL
15005
25005
35005
50005
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum Average Forward
Rectified Output Current
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load
Maximum Forward Voltage Drop
Per Element at 5.0/7.5/12.5/17.5/25.0A Peak
Maximum Reverse Current at Rated
DC Blocking Voltage Per Element
Operating Temperature Rang
Storage Temperature Rang
@T
A
=25℃
@Tc=55℃
V
RRM
V
RMS
I
(AV)
50
35
I
FSM
A
V
F
I
R
T
J
T
STG
1.1
10.0
-55 to +125
-55 to +125
V
μA
MDS0912002A
Page 1

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