BUK445-400B datasheet, PDF - EEWORLD Datasheet

BUK445-400B: DescriptionTRANSISTOR 3.8 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size47KB，1 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BUK445-400B Overview

TRANSISTOR 3.8 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

Parameter Name	Attribute value
Maker	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	3.8 A
Maximum drain-source on-resistance	1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	70 pF
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	30 W
Maximum pulsed drain current (IDM)	14 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	205 ns
Maximum opening time (tons)	65 ns

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