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HN1C03FUTE85R

Description
For Muting And Switching Applications
CategoryDiscrete semiconductor    The transistor   
File Size306KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

HN1C03FUTE85R Overview

For Muting And Switching Applications

HN1C03FUTE85R Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.3 A
Collector-based maximum capacity7 pF
Collector-emitter maximum voltage20 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
VCEsat-Max0.1 V
HN1C03F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C03F
For Muting And Switching Applications
Unit in mm
Including two devices in SM6 (Super mini type with 6 leads)
High emitter-base voltage: V
EBO
= 25V (min)
High reverse h
FE
: reverse h
FE
= 150 (typ.)(V
CE
=−2V, I
C
=−4mA)
Low on resistance: R
ON
= 1Ω (typ.)(IB = 5mA)
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
50
20
25
300
60
300
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
2-3N1A
TOSHIBA
Weight: 0.015g (typ.)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Note:
1
2007-11-01

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