BDS16X datasheet, PDF - EEWORLD Datasheet

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BDS16X: DescriptionPower Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size47KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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BDS16X Overview

Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN

BDS16X Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	HERMETIC SEALED, METAL, TO-220M, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-220AB
JESD-30 code	R-MSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz

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BDS16X BDS16XSMD BDS16XSMD05

BDS17X BDS17XSMD BDS17XSMD05

MECHANICAL DATA

Dimensions in mm

1 0.6

0.8

4.6

16.5

3.6

Dia.

SILICON NPN EPITAXIAL BASE

IN TO220 METAL AND

SMD CERAMIC SURFACE MOUNT

PACKAGES

FEATURES

•

HERMETIC METAL OR CERAMIC PACKAGES

HIGH RELIABILITY

MILITARY AND SPACE OPTIONS

SCREENING TO CECC LEVELS

FULLY ISOLATED (METAL VERSION)

1 3 .5

1 0 .6

1 23

1 3 .7 0

1.0

2 .5 4

BSC

2. 70

BSC

APPLICATIONS

• POWER LINEAR AND SWITCHING

APPLICATIONS

• GENERAL PURPOSE POWER

7.54 (0.296)

0.76 (0.030)

TO220M

- TO220 Metal Package - Isolated

Pin 1

– Base

Pin 2

– Collector

Pin 3

– Emitter

0 .8 9

(0 .0 3 5 )

m in .

3 .7 0 (0 .1 4 6 )

3 .4 1 (0 .1 3 4 )

4 .1 4 (0 .1 6 3 )

3 .8 4 (0 .1 5 1 )

3 .6 0 (0 .1 4 2 )

M a x .

1

3

3.05 (0.120)

min.

2.41 (0.095)

0.127 (0.005)

3.175 (0.125)

Max.

0 .7 6

(0 .0 3 0 )

m in .

1 6 .0 2 (0 .6 3 1 )

1 5 .7 3 (0 .6 1 9 )

1

3

10.16 (0.400)

1 0 .6 9 (0 .4 2 1 )

1 0 .3 9 (0 .4 0 9 )

2

0.76

(0.030)

min.

5.72 (.225)

2

9 .6

9 .3

1 1 .5

1 1 .2

7 (0

8 (0

.3 8

.3 6

.4 5

.4 4

1 )

9 )

6 )

4 )

0 .5 0 (0 .0 2 0 )

0 .2 6 (0 .0 1 0 )

0.127 (0.005)

16 PLCS

0.50(0.020)

7.26 (0.286)

0.127 (0.005)

SMD1(TO276AB)-

Ceramic Surface Mount Package

Pad 1

– Base

Pad 2

– Collector

Pad 3

– Emitter

0.50 (0.020)

max.

SMD05 (TO276AA)-

Ceramic Surface Mount Package

Pad 1

– Base

Pad 2

– Collector

Pad 3

– Emitter

ABSOLUTE MAXIMUM RATINGS

(T

case

=25°C unless otherwise stated)

V

CBO

V

CEO

V

EBO

I

E

, I

C

I

B

P

tot

T

stg

T

j

Collector - Base voltage (I

E

= 0)

Collector - Emitter voltage (I

B

= 0)

Emitter - Base voltage (I

C

= 0)

Emitter , Collector current

Base current

Total power dissipation at T

case

≤

75°C

Storage Temperature

Junction Temperature

BDS16X

120V

BDS17X

150V

5V

8A

2A

50W

–65 TO 200°C

200°C

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Document Number 3962

Issue 1

BDS16X Related Products

	BDS16X	BDS16XSMD05	BDS17XSMD05	BDS17XSMD	BDS16XSMD	BDS17X
Description	Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN	Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN	Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN	Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	HERMETIC SEALED, METAL, TO-220M, 3 PIN	HERMETIC SEALED, CERAMIC, SMD05, 3 PIN	HERMETIC SEALED, CERAMIC, SMD05, 3 PIN	HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	HERMETIC SEALED, METAL, TO-220M, 3 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	ISOLATED
Maximum collector current (IC)	8 A	8 A	8 A	8 A	8 A	8 A
Collector-emitter maximum voltage	120 V	120 V	150 V	150 V	120 V	150 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	15	15	15	15	15
JEDEC-95 code	TO-220AB	TO-276AA	TO-276AA	TO-276AB	TO-276AB	TO-220AB
JESD-30 code	R-MSFM-T3	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3	R-MSFM-T3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	METAL
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	YES	YES	YES	NO
Terminal form	THROUGH-HOLE	NO LEAD	NO LEAD	NO LEAD	NO LEAD	THROUGH-HOLE
Terminal location	SINGLE	BOTTOM	BOTTOM	BOTTOM	BOTTOM	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz	30 MHz	30 MHz	30 MHz	30 MHz

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