DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BST15; BST16
PNP high-voltage transistors
Product specification
Supersedes data of 1999 Apr 26
2004 Dec 14
Philips Semiconductors
Product specification
PNP high-voltage transistors
FEATURES
•
Low current (max. 200 mA)
•
High voltage (max. 300 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
PNP high-voltage transistor in a SOT89 plastic package.
NPN complements: BST39 and BST40.
PINNING
PIN
1
2
3
emitter
collector
base
BST15; BST16
DESCRIPTION
2
3
MARKING
1
TYPE NUMBER
BST15
BST16
MARKING CODE
BT1
BT2
sym079
3
2
1
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BST15
BST16
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
2004 Dec 14
2
Philips Semiconductors
Product specification
PNP high-voltage transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BST15
BST16
V
CEO
collector-emitter voltage
BST15
BST16
V
EBO
emitter-base voltage
BST15
BST16
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C;
note 1
open collector
−
−
−
−
−
−
−65
−
−65
open base
−
−
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
MIN.
BST15; BST16
MAX.
−200
−350
−200
−300
−4
−6
−200
−400
−200
1.3
+150
150
+150
V
V
V
V
V
V
UNIT
mA
mA
mA
W
°C
°C
°C
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
R
th(j-s)
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
95
15
UNIT
K/W
K/W
2004 Dec 14
3
Philips Semiconductors
Product specification
PNP high-voltage transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
BST15
BST16
I
EBO
emitter-base cut-off current
BST15
BST16
h
FE
DC current gain
BST15
BST16
V
CEsat
C
c
f
T
collector-emitter saturation voltage
collector capacitance
transition frequency
I
C
=
−50
mA; I
B
=
−5
mA
I
E
= i
e
= 0 A; V
CB
=
−10
V;
f = 1 MHz
I
C
=
−10
mA; V
CE
=
−10
V;
f = 100 MHz
I
C
= 0 A; V
EB
=
−4
V
I
C
= 0 A; V
EB
=
−6
V
I
C
=
−50
mA; V
CE
=
−10
V
30
30
−
−
15
−
−
PARAMETER
collector-base cut-off current
I
E
= 0 A; V
CB
=
−175
V
I
E
= 0 A; V
CB
=
−280
V
−
−
CONDITIONS
MIN.
BST15; BST16
MAX.
−100
−100
−100
−100
150
120
750
15
−
UNIT
nA
nA
nA
nA
mV
pF
MHz
2004 Dec 14
4
Philips Semiconductors
Product specification
PNP high-voltage transistors
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
BST15; BST16
SOT89
D
B
A
b
p3
E
H
E
L
p
1
2
b
p2
w
M
b
p1
e
1
e
3
c
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.6
1.4
bp1
0.48
0.35
bp2
0.53
0.40
bp3
1.8
1.4
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
e
3.0
e1
1.5
HE
4.25
3.75
Lp
1.2
0.8
w
0.13
OUTLINE
VERSION
SOT89
REFERENCES
IEC
JEDEC
TO-243
JEITA
SC-62
EUROPEAN
PROJECTION
ISSUE DATE
99-09-13
04-08-03
2004 Dec 14
5
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