BSS88E6325 datasheet, PDF - EEWORLD Datasheet

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BSS88E6325: DescriptionSmall Signal Field-Effect Transistor, 0.25A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92; CategoryDiscrete semiconductor The transistor; File Size295KB，7 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BSS88E6325 Overview

Small Signal Field-Effect Transistor, 0.25A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

BSS88E6325 Parametric

Parameter Name	Attribute value
Maker	SIEMENS
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	240 V
Maximum drain current (ID)	0.25 A
Maximum drain-source on-resistance	8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	12 pF
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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BSS88E6325 Related Products

	BSS88E6325	BSS88E-6288	BSS88E6288	BSS88E-6296	BSS88E6296
Description	Small Signal Field-Effect Transistor, 0.25A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	250mA, 240V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92	Small Signal Field-Effect Transistor, 0.25A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	250mA, 240V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN	Small Signal Field-Effect Transistor, 0.25A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-W3	SMALL OUTLINE, R-PDSO-G3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	240 V	240 V	240 V	240 V	240 V
Maximum drain current (ID)	0.25 A	0.25 A	0.25 A	0.25 A	0.25 A
Maximum drain-source on-resistance	8 Ω	8 Ω	8 Ω	8 Ω	8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-W3	O-PBCY-T3	O-PBCY-W3	R-PDSO-G3	O-PBCY-T3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	SMALL OUTLINE	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	YES	NO
Terminal form	WIRE	THROUGH-HOLE	WIRE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	DUAL	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	SIEMENS	-	-	SIEMENS	SIEMENS
ECCN code	EAR99	-	EAR99	-	EAR99
Other features	LOGIC LEVEL COMPATIBLE	-	LOGIC LEVEL COMPATIBLE	-	LOGIC LEVEL COMPATIBLE
Maximum feedback capacitance (Crss)	12 pF	-	12 pF	-	12 pF
transistor applications	SWITCHING	-	SWITCHING	-	SWITCHING
Base Number Matches	-	1	1	1	1

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