BSS88E-6296 datasheet, PDF - EEWORLD Datasheet

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BSS88E-6296: Description250mA, 240V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN; CategoryThe transistor; File Size295KB，7 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BSS88E-6296 Overview

250mA, 240V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN

BSS88E-6296 Parametric

Parameter Name	Attribute value
Maker	SIEMENS
Parts packaging code	TO-92
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
Is Samacsys	N
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	240 V
Maximum drain current (ID)	0.25 A
Maximum drain-source on-resistance	8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-92
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Transistor component materials	SILICON
Base Number Matches	1

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BSS88E-6296 Related Products

	BSS88E-6296	BSS88E-6288	BSS88E6288	BSS88E6296	BSS88E6325
Description	250mA, 240V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN	250mA, 240V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92	Small Signal Field-Effect Transistor, 0.25A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.25A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN	Small Signal Field-Effect Transistor, 0.25A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
package instruction	SMALL OUTLINE, R-PDSO-G3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	240 V	240 V	240 V	240 V	240 V
Maximum drain current (ID)	0.25 A	0.25 A	0.25 A	0.25 A	0.25 A
Maximum drain-source on-resistance	8 Ω	8 Ω	8 Ω	8 Ω	8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	R-PDSO-G3	O-PBCY-T3	O-PBCY-W3	O-PBCY-T3	O-PBCY-W3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	SMALL OUTLINE	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	WIRE	THROUGH-HOLE	WIRE
Terminal location	DUAL	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	SIEMENS	-	-	SIEMENS	SIEMENS
Base Number Matches	1	1	1	1	-
ECCN code	-	-	EAR99	EAR99	EAR99
Other features	-	-	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Maximum feedback capacitance (Crss)	-	-	12 pF	12 pF	12 pF
transistor applications	-	-	SWITCHING	SWITCHING	SWITCHING

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