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BSM150GT120DLC

Description
Insulated Gate Bipolar Transistor, 250A I(C), 1200V V(BR)CES, N-Channel, ECONO TRIPACK-39
CategoryDiscrete semiconductor    The transistor   
File Size111KB,9 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric View All

BSM150GT120DLC Overview

Insulated Gate Bipolar Transistor, 250A I(C), 1200V V(BR)CES, N-Channel, ECONO TRIPACK-39

BSM150GT120DLC Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
package instructionECONO TRIPACK-39
Reach Compliance Codeunknown
Maximum collector current (IC)250 A
Collector-emitter maximum voltage1200 V
Configuration3 BANKS, PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X39
Number of components6
Number of terminals39
Maximum operating temperature125 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1000 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)570 ns
Nominal on time (ton)60 ns
VCEsat-Max2.6 V
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM150GT120DLC
vorläufige Daten
preliminary data
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
2
I t - value, Diode
Isolations-Prüfspannung
insulation test voltage
t
P
= 1 ms
T
C
= 80 °C
T
C
= 25 °C
t
P
= 1 ms, T
C
= 80°C
V
CES
I
C,nom.
I
C
I
CRM
1200
150
250
300
V
A
A
A
T
C
=25°C, Transistor
P
tot
1000
W
V
GES
+/- 20V
V
I
F
150
A
I
FRM
300
A
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
2
I t
4,75
kA
2
s
RMS, f = 50 Hz, t = 1 min.
V
ISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
I
C
= 150A, V
GE
= 15V, T
vj
= 25°C
I
C
= 150A, V
GE
= 15V, T
vj
= 125°C
I
C
= 6mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
V
CE sat
min.
-
-
4,5
typ.
2,1
2,4
5,5
max.
2,6
t.b.d.
6,5
V
V
V
V
GE
= -15V...+15V
Q
G
-
t.b.d.
-
µC
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
ies
-
10
-
nF
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25°C
V
CE
= 1200V, V
GE
= 0V, T
vj
= 125°C
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
C
res
I
CES
-
-
-
t.b.d.
10
500
-
-
500
-
400
nF
µA
µA
nA
I
GES
-
prepared by: Mark Münzer
approved by: Jens Thurau
date of publication: 08.02.1999
revision: 1
1(8)
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