HMC465LP5
/
465LP5E
v06.1210
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20 GHz
Features
Gain: 15 dB
output voltage to 10vpk-pk
+24 dBm saturated output power
supply voltage: +8v @160 mA
50 ohm matched input/output
32 lead 5x5 mm Qfn package: 25 mm
2
8
Amplifiers - Driver & GAin Block - smT
Typical Applications
The Hmc465lp5(e) wideband driver is ideal for:
• oc192 ln/mZ modulator Driver
• microwave radio & vsAT
• Test instrumentation
• military eW, ecm & c
3
i
Functional Diagram
General Description
The Hmc465lp5(e) is a GaAs mmic pHemT Dis-
tributed Driver Amplifier packaged in leadless 5x5
mm surface mount package which operate between
Dc and 20 GHz. The amplifier provides 15 dB of gain,
3 dB noise figure and +25 dBm of saturated output
power while requiring only 160 mA from a +8v supply.
Gain flatness is excellent at ±0.5 dB as well as ±4
deg deviation from linear phase from Dc - 10 GHz
making the Hmc465lp5(e) ideal for oc192 fiber
optic ln/mZ modulator driver amplifiers as well as
test equipment applications. The Hmc465lp5(e)
amplifiers i/os are internally matched to 50 ohms.
Electrical Specifications,
T
A
= +25° C, Vdd= 8V, Vgg2= 1.5V, Idd= 160 mA*
parameter
frequency range
Gain
Gain flatness
Gain variation over Temperature
noise figure
input return loss
output return loss
output power for 1 dB compression (p1dB)
saturated output power (psat)
output Third order intercept (ip3)
saturated output voltage
Group Delay variation
supply current
(idd) (vdd= 8v, vgg1= -0.6v Typ.)
21
13
min.
Typ.
Dc - 6
16
±0.75
0.015
3.0
20
22
24
25.5
32
10
±15
160
20
0.02
12
max.
min.
Typ.
6.0 - 12.0
15
±0.25
0.020
3.0
15
17
23
25
28
10
±15
160
160
16
0.025
9.5
max.
min.
Typ.
12.0 - 20.0
12.5
±1.5
0.035
4.0
8
12
20
23
24
8
0.045
max.
Units
GHz
dB
dB
dB/ °c
dB
dB
dB
dBm
dBm
dBm
vpk-pk
psec
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 160 mA typical.
8-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC465LP5 / 465LP5E
v06.1210
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20 GHz
Gain vs. Temperature
20
Gain & Return Loss
20
15
10
RESPONSE (dB)
5
0
-5
-10
-15
-20
-25
-30
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
16
S21
S11
S22
8
+25C
+85C
-40C
12
8
4
0
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
+25C
+85C
-40C
Low Frequency Gain & Return Loss
25
15
RESPONSE (dB)
5
-5
-15
-25
-35
-45
0.00001
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
+25C
+85C
-40C
S21
S11
S22
7
6
5
4
3
2
1
0
0.0001
0.001
0.01
0.1
1
10
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8-2
Amplifiers - Driver & GAin Block - smT
GAIN (dB)
HMC465LP5 / 465LP5E
v03.1106
v06.1210
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20 GHz
Psat vs. Temperature
30
8
Amplifiers - Driver & GAin Block - smT
P1dB vs. Temperature
30
26
P1dB (dBm)
Psat (dBm)
26
22
22
+25C
+85C
-40C
18
+25C
+85C
-40C
18
14
14
10
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
10
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Output IP3 vs. Temperature
40
38
36
34
IP3 (dBm)
32
30
28
26
24
22
20
18
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
+25C
+85C
-40C
Gain, Power & Output IP3 vs. Supply
Voltage @ 10 GHz, Idd = 160mA
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
32
30
28
26
24
22
20
18
16
14
12
10
7.5
8
SUPPLY VOLTAGE (V)
8.5
Gain
P1dB
Psat
IP3
Group Delay
-200
Deviation from Linear Phase
DEVIATION FROM LINEAR PHASE (deg)
10
GROUP DELAY (pSec)
6
-250
2
-300
-2
-350
-6
-400
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
-10
0
2
4
6
8
10
FREQUENCY (GHz)
8-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC465LP5 / 465LP5E
v06.1210
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20 GHz
Typical Supply Current vs. Vdd
vdd (v)
+7.5
+8.0
+8.5
idd (mA)
161
160
159
Absolute Maximum Ratings
Drain Bias voltage (vdd)
Gate Bias voltage (vgg1)
Gate Bias current (igg1)
Gate Bias voltage (vgg2)
Gate Bias current (igg2)
rf input power (rfin)(vdd = +8 vdc)
channel Temperature
continuous pdiss (T = 85 °c)
(derate 24 mW/°c above 85 °c)
Thermal resistance
(channel to ground paddle)
storage Temperature
operating Temperature
+9 vdc
-2 to 0 vdc
+3.2mA
(vdd -8) vdc to +3 vdc
+3.2mA
+23 dBm
150 °c
1.56 W
41.5 °c/W
-65 to +150 °c
-40 to +85 °c
8
Amplifiers - Driver & GAin Block - smT
8-4
elecTrosTATic sensiTive Device
oBserve HAnDlinG precAUTions
Outline Drawing
noTes:
1. leADfrAme mATeriAl: copper AlloY
2. Dimensions Are in incHes [millimeTers]
3. leAD spAcinG TolerAnce is non-cUmUlATive.
4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm.
pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm.
5. pAckAGe WArp sHAll noT eXceeD 0.05mm.
6. All GroUnD leADs AnD GroUnD pADDle mUsT Be
solDereD To pcB rf GroUnD.
7. refer To HiTTiTe ApplicATion noTe for sUGGesTeD
lAnD pATTern.
Package Information
part number
Hmc465lp5
Hmc465lp5e
package Body material
low stress injection molded plastic
roHs-compliant low stress injection molded plastic
lead finish
sn/pb solder
100% matte sn
msl rating
msl1
msl1
[1]
package marking
[3]
H465
XXXX
H465
XXXX
[2]
[1] max peak reflow temperature of 235 °c
[2] max peak reflow temperature of 260 °c
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC465LP5 / 465LP5E
v06.1210
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20 GHz
8
Amplifiers - Driver & GAin Block - smT
Pin Descriptions
pin number
1, 3, 4, 6 - 12, 14,
17, 18, 19, 20,
22 - 28, 31, 32
function
n/c
Description
The pins are not connected internally; however, all data
shown herein was measured with these pins connected
to rf/Dc ground externally.
Gate control 2 for amplifier. +1.5v should
be applied to vgg2 for nominal operation.
interface schematic
2
vgg2
5
rfin
This pad is Dc coupled
and matched to 50 ohms.
13
vgg1
Gate control 1 for amplifier.
15
AcG4
low frequency termination. Attach bypass capacitor per
application circuit herein.
16
AcG3
21
rfoUT &
vdd
rf output for amplifier. connect the Dc
bias (vdd) network to provide drain current (idd).
see application circuit herein.
low frequency termination. Attach bypass capacitor per
application circuit herein.
29
30
Ground paddle
AcG2
AcG1
GnD
Ground paddle must be connected to rf/Dc ground.
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
8-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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