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HMC-ABH241

Description
HMC-ABH241
CategoryWireless rf/communication    Radio frequency and microwave   
File Size383KB,6 Pages
ManufacturerADI
Websitehttps://www.analog.com
Environmental Compliance
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HMC-ABH241 Overview

HMC-ABH241

HMC-ABH241 Parametric

Parameter NameAttribute value
Brand NameAnalog Devices Inc
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerADI
Contacts0
Reach Compliance Codecompliant
ECCN code3A001.B.2.F
structureCOMPONENT
Gain19 dB
Maximum input power (CW)2 dBm
Maximum operating frequency66000 MHz
Minimum operating frequency50000 MHz
RF/Microwave Device TypesWIDE BAND MEDIUM POWER
HMC-ABH241
v03.0412
Gaas HEMT MMIC MEDIUM POWER
amplifier, 50 - 66 GHz
Typical applications
This HmC-aBH241 is ideal for:
Features
output iP3: +25 dBm
P1dB: +17 dBm
Gain: 24 dB
supply Voltage: +5V
50 ohm matched input/output
Die size: 3.2 x 1.42 x 0.1 mm
Linear & Power amPLifiers - CHiP
• Short Haul / High Capacity Links
• Wireless LAN Bridges
• Military & Space
Functional Diagram
General Description
The HmC-aBH241 is a four stage Gaas HemT mmiC
medium Power amplifier which operates between
50 and 66 GHz. The HmC-aBH241 provides 24 dB
of gain, and an output power of +17 dBm at 1dB
compression from a +5V supply voltage. all bond pads
and the die backside are Ti/Au metallized and the
amplifier device is fully passivated for reliable operation.
The HmC-aBH241 Gaas HemT mmiC medium
Power amplifier is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wire bonding, making it ideal for MCM and
hybrid microcircuit applications. all data shown herein
is measured with the chip in a 50 ohm environment
and contacted with rf probes.
Vdd1= Vdd2= Vdd3= 5V, Idd1 + Idd2 + Idd3= 220ma
[2]
Parameter
frequency range
Gain
input return Loss
output return Loss
output Power for 1 dB Compression (P1dB)
output Third order intercept (iP3)
saturated output Power (Psat)
supply Current (idd1 + idd2 + idd3)
[1] Unless otherwise indicated, all measurements are from probed die
[2] adjust Vgg1 = Vgg2 = Vgg3 between -1V to +0.3V (typ -0.3V) to achieve idd
total
= 220ma
19
min.
Typ.
50 - 66
24
15
15
17
25
19
220
max.
Units
GHz
dB
dB
dB
dBm
dBm
dBm
ma
Electrical specifications
,
T
a
= +25° C,
1
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and
Drive,
orders: Analog Devices, Inc.,
For price, delivery and to place orders:
infringements of patents or
Corporation, 2 Elizabeth
to place
Chelmsford, MA 01824
responsibility is assumed by Analog Devices for its use, nor for any
Hittite Microwave
other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373
Phone: 781-329-4700
www.hittite.com
Order On-line at
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Application Support: Phone: 978-250-3343 or apps@hittite.com

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