DATA SHEET
SILICON TRANSISTOR
µ
PA811T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2
×
2SC4228) SMALL MINI MOLD
The
µ
PA811T has built-in 2 low-voltage transistors which are designed to
amplify low noise in the VHF band to the UHF band.
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
FEATURES
• Low Noise
NF = 1.9 dB TYP. @ f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
1
0.65 0.65
1.3
|S
21e
|
2
= 6.5 dB TYP. @ f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
• A Small Mini Mold Package Adopted
• Built-in 2 Transistors (2
×
2SC4228)
2.0±0.2
2
3
ORDERING INFORMATION
0.9±0.1
PART NUMBER
QUANTITY
Loose products
(50 PCS)
PACKING STYLE
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
0.7
µ
PA811T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
PIN CONFIGURATION (Top View)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
RATING
20
10
1.5
35
150 in 1 element
200 in 2 elements
Note
150
–65 to +150
UNIT
V
V
V
mA
mW
6
Q
1
1
5
0 to 0.1
4
Q
2
2
3
PIN CONNECTIONS
4. Emitter (Q2)
1. Collector (Q1)
5. Emitter (Q1)
2. Base (Q2)
6. Base (Q1)
3. Collector (Q2)
Junction Temperature
Storage Temperature
T
j
T
stg
˚C
˚C
Note
110 mW must not be exceeded in 1 element.
The information in this document is subject to change without notice.
Document No. P11464EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
0.15
–0
+0.1
µ
PA811T
4
5
6
• High Gain
0.2
–0
+0.1
XY
µ
PA811T
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
h
FE
Ratio
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21e
|
2
NF
h
FE1
/h
FE2
CONDITION
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 5 mA
Note 1
V
CE
= 3 V, I
C
= 5 mA
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA
A smaller value among h
FE
of h
FE1
= Q1, Q2
A Larger value among h
FE
of h
FE2
= Q1, Q2
0.85
5.5
7.5
1.9
3.2
80
5.5
8.0
0.7
MIN.
TYP.
MAX.
1.0
1.0
200
GHz
pF
dB
dB
UNIT
µ
A
µ
A
Notes 1.
Pulse Measurement: Pw
≤
350
µ
s, Duty cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
44R
80 to 160
GB
45R
125 to 250
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
P
T
- T
A
Characteristics
25
I
C
- V
CE
Characteristics
Total Power Dissipation P
T
(mW)
Free Air
160
µ
A
Collector Current I
C
(mA)
200
20
2
El
em
15
en
A
140
µ
120
µ
A
100
µ
A
80
µ
A
100
Pe
rE
ts
in
lem
To
en
ta
l
10
60
µ
A
40
µ
A
I
B
= 20
µ
A
t
5
0
50
100
150
0
5
Collector to Emitter Voltage V
CE
(V)
1.0
Ambient Temperature T
A
(°C)
I
C
- V
BE
Characteristics
20
V
CE
= 3 V
200
V
CE
= 3 V
h
FE
- I
C
Characteristics
Collector Current I
C
(mA)
DC Current Gain h
FE
100
10
50
20
0
0.5
Base to Emitter Voltage V
BE
(V)
1.0
10
0.5
1
5
10
50
Collector Current I
C
(mA)
2
京公网安备 11010802033920号
EEWORLD
