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GS8160Z18DGT-333IT

Description
ZBT SRAM, 1MX18, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
Categorystorage    storage   
File Size343KB,23 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Download Datasheet Parametric View All

GS8160Z18DGT-333IT Overview

ZBT SRAM, 1MX18, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100

GS8160Z18DGT-333IT Parametric

Parameter NameAttribute value
MakerGSI Technology
package instructionLQFP,
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Other featuresIT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE
JESD-30 codeR-PQFP-G100
length20 mm
memory density18874368 bit
Memory IC TypeZBT SRAM
memory width18
Number of functions1
Number of terminals100
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
organize1MX18
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Maximum seat height1.6 mm
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
width14 mm
GS8160Z18/36DGT-400/375/333/250/200/150
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization; Fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• LBO pin for Linear or Interleave Burst mode
• Pin compatible with 2Mb, 4Mb, 8Mb, 36Mb, 72Mb and
144Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• RoHS-compliant 100-lead TQFP package available
18Mb Pipelined and Flow Through
Synchronous NBT SRAMs
400 MHz–150 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8160Z18/36DGT may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, meaning that in addition to the
rising edge triggered registers that capture input signals, the
device incorporates a rising-edge-triggered output register. For
read cycles, pipelined SRAM output data is temporarily stored
by the edge triggered output register during the access cycle
and then released to the output drivers at the next rising edge of
clock.
Functional Description
The GS8160Z18/36DGT is an 18Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Parameter Synopsis
t
KQ
tCycle
Curr
(x18)
Curr
(x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x36)
-400
2.5
2.5
370
430
4.0
4.0
275
315
-375
2.5
2.66
350
410
4.2
4.2
265
300
-333
2.5
3.3
310
365
4.5
4.5
255
285
-250
2.5
4.0
250
290
5.5
5.5
220
250
-200
3.0
5.0
210
240
6.5
6.5
205
225
-150
3.8
6.7
185
200
7.5
7.5
190
205
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
Rev: 1.03b 9/2013
1/23
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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