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UPA675T

Description
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
File Size45KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA675T Overview

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA675T
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The
µ
PA675T is an N-channel vertical MOS FET. Because it
can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
PACKAGE DRAWING (Unit: mm)
0.2
-0
+0.1
0.15
-0.05
+0.1
1.25 ±0.1
2.1 ±0.1
6
5
4
0 to 0.1
FEATURES
Two MOS FET circuits in package the same size as SC-70
Automatic mounting supported
Gate can be driven by a 1.5 V power source
Because of its high input impedance, there’s no need to
consider a drive current
Since bias resistance can be omitted, the number of
components required can be reduced
1
2
3
0.7
0.9 ±0.1
0.65
0.65
1.3
2.0 ±0.2
PIN CONNECTION
ORDERING INFORMATION
6
5
4
PART NUMBER
PACKAGE
SC-88 (SSP)
1.
2.
3.
4.
5.
6.
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain 1
(S1)
(G1)
(D2)
(S2)
(G2)
(D1)
µ
PA675T
Note
Note
Marking: SA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (Tc = 25°C)
Drain Current (pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
16
±7.0
±0.1
±0.2
0.2
150
–55 to +150
V
V
A
A
W
°C
°C
1
2
3
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Note
PW
10 ms, Duty Cycle
50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G15454EJ1V0DS00 (1st edition)
Date Published May 2001 NS CP(K)
Printed in Japan
©
2001
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