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ZC836TA

Description
Variable Capacitance Diode, 100pF C(T), 25V, Silicon, Hyperabrupt
CategoryDiscrete semiconductor    diode   
File Size64KB,2 Pages
ManufacturerDiodes Incorporated
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ZC836TA Overview

Variable Capacitance Diode, 100pF C(T), 25V, Silicon, Hyperabrupt

ZC836TA Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Minimum breakdown voltage25 V
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Minimum diode capacitance ratio5
Nominal diode capacitance100 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.33 W
Certification statusNot Qualified
minimum quality factor100
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Varactor Diode ClassificationHYPERABRUPT
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