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UPA621TT

Description
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size62KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA621TT Overview

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA621TT
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA621TT is a switching device, which can be driven directly by a
2.5 V power source.
This device features a low on-state resistance and excellent switching
characteristics, and is suitable for applications such as power switch of
portable machine and so on.
PACKAGE DRAWING (Unit: mm)
2.0 ±0.2
0.25 ±0.1
6
5
4
2.1±0.1
1.6
0
~
0.05
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 50 mΩ MAX. (V
GS
= 4.5 V, I
D
= 2.5 A)
R
DS(on)2
= 53 mΩ MAX. (V
GS
= 4.0 V, I
D
= 2.5 A)
R
DS(on)3
= 79 mΩ MAX. (V
GS
= 2.5 V, I
D
= 2.5 A)
1
2
3
0.65
0.65
S
+0.1
−0.05
MAX. 0.8
ORDERING INFORMATION
PART NUMBER
PACKAGE
0.05 S
Marking: WB
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
±12
±5.0
±20
0.2
1.4
150
−55
to +150
V
V
A
A
W
W
°C
°C
Gate
Gate
Protection
Diode
Body
Diode
Drain
+0.1
0.2
−0.05
EQUIVALENT CIRCUIT
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Mounted on FR-4 board, t
5 sec.
Note2
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G16112EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
0.4 ±0.1
µ
PA621TT
0.15
6pinWSOF (1620)
1,2,5,6 : Drain
3
: Gate
4
: Source
0.1
M
S
Source
©
2002
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