DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA620TT
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA620TT is a switching device which can be driven directly by a
2.5 V power source.
This device features a low on-state resistance and excellent switching
characteristics, and is suitable for applications such as power switch of
portable machine and so on.
PACKAGE DRAWING (Unit: mm)
2.0±0.2
0.25±0.1
6
5
4
2.1±0.1
1.6
0
~
0.05
FEATURES
•
2.5 V drive available
•
Low on-state resistance
R
DS(on)1
= 38 mΩ MAX. (V
GS
= 4.5 V, I
D
= 2.5 A)
R
DS(on)2
= 39 mΩ MAX. (V
GS
= 4.0 V, I
D
= 2.5 A)
R
DS(on)3
= 54 mΩ MAX. (V
GS
= 2.5 V, I
D
= 2.5 A)
0.65
1
2
3
0.65
S
MAX. 0.8
ORDERING INFORMATION
PART NUMBER
PACKAGE
0.05 S
0.15
+0.1
−0.05
Marking: WA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
±12
±5.0
±20
0.2
1.5
150
–55 to +150
V
V
A
A
W
W
°C
°C
Gate
0.2
+0.1
−0.05
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Note2
0.4±0.1
µ
PA620TT
6 pin WSOF (1620)
1,2,5,6: Drain
3
: Gate
4
: Source
0.1
M
S
Body
Diode
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2
2.
Mounted on FR-4 board of 5000 mm x 1.1 mm, t
≤
5 sec.
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16111EJ1V0DS00 (1st edition)
Date Published September 2002 NS CP(K)
Printed in Japan
©
2002
µ
PA620TT
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
V
DD
= 16 V
V
GS
= 4.0 V
I
D
= 5.0 A
I
F
= 5.0 A, V
GS
= 0 V
TEST CONDITIONS
V
DS
= 20 V, V
GS
= 0 V
V
GS
=
±12
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1.0 mA
V
DS
= 10 V, I
D
= 2.5 A
V
GS
= 4.5 V, I
D
= 2.5 A
V
GS
= 4.0 V, I
D
= 2.5 A
V
GS
= 2.5 V, I
D
= 2.5 A
V
DS
= 10 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
= 10 V, I
D
= 2.5 A
V
GS
= 4.0 V
R
G
= 10
Ω
0.5
3.0
1.0
6.0
30
31
40
450
130
90
36
210
150
200
5.5
1.0
2.8
0.87
38
39
54
MIN.
TYP.
MAX.
10
±10
1.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
V
GS
PG.
R
G
Wave Form
V
GS
0
10%
V
GS
90%
I
G
= 2 mA
50
Ω
R
L
V
DD
V
DD
PG.
90%
V
DS
90%
10%
10%
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet G16111EJ1V0DS
µ
PA620TT
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
1.6
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125
150
175
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
Mounted on FR-4 board of
2
5000 m m x 1.1 m m , t
≤
5 sec.
T
A
- Ambient Temperature -
°C
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
100
R
DS (on)
Lim ited
(V
G S
= 4.5 V)
I
D(pulse)
PW = 1 m s
I
D(DC )
1
10 m s
0.1
Single pulse
M ounted on FR -4 board of
2
5000 m m x 1.1 m m
0.01
0.1
1
10
100
100 m s
5s
I
D
- Drain Current - A
10
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
100
10
Single pulse
Mounted on FR-4 board of
2
5000 mm x 1.1 mm
1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G16111EJ1V0DS
3
µ
PA620TT
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
Pulsed
V
GS
= 4.5 V
FORWARD TRANSFER CHARACTERISTICS
10
V
D S
= 10 V
P u lsed
1
I
D
- Drain Current - A
I
D
- Drain Current - A
15
4.0 V
0 .1
T
A
= 12 5°C
7 5°C
2 5°C
−2
5°C
10
0 .01
2.5 V
5
0 .00 1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 .00 01
0
0 .5
1
1 .5
2
2 .5
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
1.4
100
V
DS
= 10 V
I
D
= 1.0 m A
1.2
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
D S
= 10 V
Pulsed
V
GS(off)
- Gate Cut-off Voltage - V
10
1
1
0.8
T
A
=
−
25°C
25°C
75°C
125°C
0.1
0.6
0.4
-50
0
50
100
150
0.01
0.01
0.1
1
10
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
80
I
D
= 2.5 A
Pulsed
60
V
GS
= 2.5 V
4.0 V
4.5 V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
Pulsed
60
40
40
I
D
= 2.5 A
20
20
0
-50
0
50
100
150
0
0
2
4
6
8
10
12
T
ch
- Channel Temperature - °C
V
GS
- Gate to Source Voltage - V
4
Data Sheet G16111EJ1V0DS
µ
PA620TT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
80
V
GS
= 4.5 V
Pulsed
60
T
A
= 125°C
75°C
25°C
−25°C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
V
GS
= 4.0 V
Pulsed
60
T
A
= 125°C
75°C
25°C
−25°C
40
40
20
20
0
0.01
0.1
1
10
100
0
0.01
0.1
1
10
100
I
D
- Drain Current - A
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
T
A
= 125°C
75°C
25°C
−25°C
1000
V
GS
= 2.5 V
Pulsed
SWITCHING CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
D D
= 10 V
V
G S
= 4.0 V
R
G
= 10
Ω
t
r
t
f
t
d(off)
60
40
100
t
d(on)
20
0
0.01
10
0.1
1
10
100
0.1
1
10
I
D
- Drain Current - A
I
D
- Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
Pulsed
C
iss
, C
oss
, C
rss
- Capacitance - pF
I
F
- Diode Forward Current - A
C
iss
10
V
GS
= 0 V
1
100
C
oss
C
rss
0.1
10
V
GS
= 0 V
f = 1.0 M H z
0.1
1
10
100
0.01
0.4
0.6
0.8
1
1.2
1.4
V
DS
- Drain to Source Voltage - V
V
F(S-D)
- Source to Drain Voltage - V
Data Sheet G16111EJ1V0DS
5
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