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Z1200AT-G

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size111KB,6 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
Download Datasheet Parametric View All

Z1200AT-G Overview

Zener Diode,

Z1200AT-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerComchip Technology
Reach Compliance Codecompliant
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance1900 Ω
Maximum forward voltage (VF)1.2 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Maximum knee impedance9990 Ω
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Nominal reference voltage200 V
Maximum reverse current0.1 µA
Reverse test voltage152 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current1.2 mA
Axial Lead Zener Diode
1N4728A-G Thru. Z1330A-G
Zener Voltage: 3.3 to 330 Volts
DC Power: 1 Watts
RoHS Device
Features
- Glass passivated chip.
- Low leakage.
- Built-in strain relief.
- Low inductance.
- High peak reverse power dissipation.
- For use in stabilizing and clipping circuits
with high power rating.
0.117(2.97) DIA.
0.078(2.00) DIA.
0.205(5.21)
0.161(4.10)
1.000(25.40) Min.
DO-41
Mechanical data
- Case: Molded plastic.
- Epoxy: UL 94V-0 rate flame retardant.
- Terminals: Solderable per MIL-STD-202,
-
method 208 guranteed.
- Polarity: Color band denotes cathode end.
- Mounting position: Any.
- Approx. weight: 0.35 grams(approx.).
0.035(0.90) DIA.
0.027(0.70) DIA.
1.000(25.40) Min.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristics
DC power dissipation at T
L
=75°C (Note 1)
Maximum forward voltage at I
F
=200 mA
Maximum thermal resistance junction
to ambient air (Note 2)
Junction temperature range
Storage temperature range
Symbol
P
D
Value
1
Units
W
V
F
1.2
V
R
ΘJA
170
°C/W
T
J
-55 to +175
°C
T
STG
-55 to +175
°C
Notes:
1. T
L
= Lead temperature at 3/8” (9.5mm) from body.
2. Valid provided that leads are kept at ambient temperature at a distance of 10mm from case.
Company reserves the right to improve product design , functions and reliability without notice.
QW-BZ007
REV: E
Page 1
Comchip Technology CO., LTD.
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