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UPA2782GR

Description
SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE
File Size62KB,6 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
Download Datasheet View All

UPA2782GR Overview

SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2782GR
SWITCHING
N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
DESCRIPTION
The
µ
PA2782GR is N-Channel Power MOSFET, which built a
Schottky Barrier Diode inside.
This product is designed for synchronous DC/DC converter
application.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8 ; Drain
FEATURES
Built a Schottky Barrier Diode
Low on-state resistance
R
DS(on)1
= 11 mΩ TYP. (V
GS
= 10 V, I
D
= 5.5 A)
R
DS(on)2
= 16 mΩ TYP. (V
GS
= 4.5 V, I
D
= 5.5 A)
R
DS(on)3
= 19 mΩ TYP. (V
GS
= 4.0 V, I
D
= 5.5 A)
Low C
iss
: C
iss
= 660 pF TYP.
Small and surface mount package (Power SOP8)
1
4
5.37 MAX.
+0.10
–0.05
6.0 ±0.3
4.4
0.8
1.8 MAX.
1.44
0.15
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
0.12 M
µ
PA2782GR
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C. All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
[MOSFET]
Drain Current (pulse)
Note1
Note2
EQUIVALENT CIRCUIT
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
30
±20
±11
±44
2.5
2
1
150
V
V
A
A
A
W
W
°C
°C
Gate
Protection
Diode
Source
Gate
Schottky
Diode
Average Forward Current
Total Power Dissipation
Total Power Dissipation
[SCHOTTKY]
I
F(AV)
P
T
P
T
T
ch
, T
j
Note3
Note3
[MOSFET]
[SCHOTTKY]
Channel & Junction Temperature
Storage Temperature
T
stg
−55
to + 150
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Rectangle wave, 50% Duty Cycle
2
3.
Mounted on ceramic substrate of 1200 mm x 2.2 mm
Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16421EJ1V0DS00 (1st edition)
Date Published April 2003 NS CP(K)
Printed in Japan
2002
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