Preliminary Technical Information
High Voltage, High Gain
BIMOSFET
TM
Monolithic Bipolar MOS
Transistor
IXBH2N250
IXBT2N250
V
CES
= 2500V
I
C110
= 2A
V
CE(sat)
3.80V
TO-268 (IXBT)
G
E
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
C
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1M
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1ms
V
GE
= 15V, T
VJ
= 125°C, R
G
= 47
Clamped Inductive Load
T
C
= 25°C
Maximum Ratings
2500
2500
± 20
± 30
5
2
13
I
CM
= 6
V
CE
2000
32
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
V
W
°C
°C
°C
°C
°C
Nm/lb.in
g
g
Features
C
(Tab)
TO-247 (IXBH)
G
C
E
C
(Tab)
D
= Drain
Tab = Drain
G = Gate
S = Source
G = Gate
E = Emitter
C
= Collector
Tab = Collector
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247)
TO-247
TO-268
300
260
1.13 / 10
6
4
High Blocking Voltage
Integrated Anti-parallel Diode
International Standard Packages
Low Conduction Losses
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250μA, V
CE
= V
GE
= 250μA, V
CE
= V
GE
T
J
= 125C
V
CE
= 0V, V
GE
=
20V
I
C
= 2A, V
GE
= 15V, Note 1
T
J
= 125C
3.15
4.08
Characteristic Values
Min.
Typ.
Max.
2500
3.0
5.5
10
100
100
3.80
V
V
A
μA
nA
V
V
Low Gate Drive Requirement
High Power Density
V
CE
= 0.8
•
V
CES
, V
GE
= 0V
Applications
Switched-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generator
Capacitor Discharge Circuit
AC Switches
© 2017 IXYS CORPORATION, All Rights Reserved
DS100160A(8/17)
IXBH2N250
IXBT2N250
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fS
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Resistive Switching times, T
J
= 25°C
I
C
= 2A, V
GE
= 15V
V
CE
= 2kV, R
G
= 47
Resistive Switching times, T
J
= 125°C
I
C
= 2A, V
GE
= 15V
V
CE
= 2kV, R
G
= 47
I
C
= 2A, V
GE
= 15V, V
CE
= 1kV
V
CE
= 25V, V
GE
= 0V, f = 1MHz
I
C
= 2A, V
CE
= 10V, Note 1
Characteristic Values
Min.
Typ.
Max.
0.85
1.40
145
8.7
3.2
10.6
0.8
6.2
30
180
70
182
30
280
74
178
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
3.90
°
C/W
0.21
Pins: 1 - Gate
2,4 - Collector
3 - Emitter
TO-268 Outline
R
thJC
R
thCS
°
C/W
TO-247 Outline
Reverse Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
V
F
t
rr
I
RM
Q
RM
I
F
= 2A, V
GE
= 0V, Note 1
I
F
= 2A, V
GE
= 0V, -di
F
/dt = 100A/μs
V
R
= 100V, V
GE
= 0V
0.92
9.80
4.50
Characteristic Values
Min.
Typ.
Max.
2.4
V
μs
A
μC
Pins: 1 - Gate
2,4 - Collector
3 - Emitter
Note 1. Pulse test, t
300μs, duty cycle, d
2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXBH2N250
IXBT2N250
Fig. 1. Output Characteristics @ T
J
= 25
o
C
4.0
3.5
3.0
V
GE
= 25V
20V
15V
28
V
GE
= 25V
24
20
20V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
I
C
- Amperes
I
C
-
Amperes
2.5
10V
2.0
1.5
1.0
0.5
5V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
16
15V
12
8
10V
4
0
0
4
8
12
16
20
24
28
32
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics @ T
J
= 125
o
C
4.0
3.5
3.0
V
GE
= 25V
20V
15V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
5V
0.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
25
50
V
GE
= 15V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
I
C
= 4A
I
C
- Amperes
2.5
2.0
1.5
1.0
0.5
0.0
10V
V
CE(sat)
- Normalized
I
C
= 2A
I
C
= 1A
75
100
125
150
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
5
7
9
11
13
15
17
19
21
23
25
1A
2A
T
J
= 25 C
o
Fig. 6. Input Admittance
9
8
7
6
T
J
= - 40 C
25 C
o
125 C
o
o
I
C
-
Amperes
V
CE
- Volts
I
C
= 4A
5
4
3
2
1
0
3
4
5
6
7
8
9
10
11
V
GE
- Volts
V
GE
- Volts
© 2017 IXYS CORPORATION, All Rights Reserved
IXBH2N250
IXBT2N250
Fig. 7. Transconductance
2.4
T
J
= - 40 C
2
25 C
125 C
1.2
o
o
o
Fig. 8. Forward Voltage Drop of Intrinsic Diode
6
5
g
f s
-
Siemens
1.6
4
I
F
- Amperes
T
J
= 25 C
3
T
J
= 125 C
2
o
o
0.8
0.4
1
0
0
1
2
3
4
5
6
7
8
9
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
I
C
- Amperes
V
F
- Volts
Fig. 9. Gate Charge
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
11
1
0
5
10
V
CE
= 1kV
I
C
= 2A
I
G
= 1mA
1,000
f = 1 MHz
Fig. 10. Capacitance
Capacitance - PicoFarads
100
Cies
V
GE
- Volts
Coes
10
Cres
15
20
25
30
35
40
Q
G
- NanoCoulombs
V
CE
- Volts
Fig. 11. Reverse-Bias Safe Operating Area
7
6
5
1
10
Fig. 12. Maximum Transient Thermal Impedance
I
C
- Amperes
4
3
2
1
0
500
750
1000
1250
1500
1750
2000
2250
2500
Z
(th)JC
- K / W
0.1
T
J
= 125 C
R
G
= 47Ω
dv / dt < 10V / ns
0.01
0.00001
o
0.0001
0.001
0.01
0.1
1
V
CE
- Volts
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBH2N250
IXBT2N250
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
400
350
300
I
C
= 2A
250
200
150
100
100
50
25
35
45
55
65
75
85
95
105
115
125
50
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
I
C
= 4A
R
G
= 47Ω, V
GE
= 15V
V
CE
= 2KV
350
450
400
R
G
= 47Ω, V
GE
= 15V
V
CE
= 2KV
T
J
= 125 C
o
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
t
r
- Nanoseconds
t
r
- Nanoseconds
300
250
200
150
T
J
= 25 C
o
T
J
- Degrees Centigrade
I
C
- Amperes
600
550
500
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
t
r
o
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
65
60
55
320
280
240
120
t
d(on)
t
f
V
CE
= 2KV
t
d(off)
110
100
T
J
= 125 C, V
GE
= 15V
V
CE
= 2KV
R
G
= 47Ω, V
GE
= 15V
t
d(off)
- Nanoseconds
t
d(on)
- Nanoseconds
t
r
- Nanoseconds
t
f
- Nanoseconds
450
400
350
300
250
200
150
40
80
120
160
200
240
I
C
= 4A, 2A
50
45
40
35
30
25
20
280
200
160
120
80
40
0
25
35
45
55
65
75
85
95
105
115
90
80
70
60
50
40
125
I
C
= 2A
I
C
= 4A
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
320
280
240
120
360
320
280
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
300
110
100
t
f
V
CE
= 2KV
t
d(off)
t
f
o
t
d(off
)
270
240
R
G
= 47Ω, V
GE
= 15V
T
J
= 125 C, V
GE
= 15V
V
CE
= 2KV
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
t
f
- Nanoseconds
200
160
120
80
40
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
T
J
= 25 C, 125 C
o
o
90
80
70
60
50
40
240
I
C
= 2A
200
160
120
I
C
= 4A
80
40
0
40
80
120
160
200
240
210
180
150
120
90
60
30
280
I
C
- Amperes
R
G
- Ohms
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: B_2N250 (2P) 6-16-09
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