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S71NS64NA0BJWSW3

Description
Memory Circuit, 4MX16, CMOS, PBGA44, 9.20 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-44
Categorystorage    storage   
File Size3MB,113 Pages
ManufacturerSPANSION
Websitehttp://www.spansion.com/
Environmental Compliance
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S71NS64NA0BJWSW3 Overview

Memory Circuit, 4MX16, CMOS, PBGA44, 9.20 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-44

S71NS64NA0BJWSW3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSPANSION
Parts packaging codeBGA
package instructionTFBGA,
Contacts44
Reach Compliance Codecompliant
Other featuresPSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE
JESD-30 codeR-PBGA-B44
JESD-609 codee1
length9.2 mm
memory density67108864 bit
Memory IC TypeMEMORY CIRCUIT
memory width16
Humidity sensitivity level3
Number of functions1
Number of terminals44
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.5 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
width8 mm
S71NS128NA0/S71NS064NA0 Based MCPs
Stacked Multi-Chip Product (MCP) MirrorBit™ Flash Memory
and pSRAM 128 Mb (8M x 16-bit) and 64 Mb (4M x 16-Bit),
110 nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/
Write, Burst Mode Flash Memory with
16 Mb (1M x 16-Bit) pSRAM
Data Sheet
ADVANCE
INFORMATION
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Publication Number
S71NS128_064NA0_00
Revision
A
Amendment
1
Issue Date
September 23, 2005
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