DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2707TP
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The
µ
PA2707TP which has a heat spreader is N-
channel MOS Field Effect Transistor designed for
DC/DC converter and power management applications
of notebook computer.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power HSOP8
Note
µ
PA2707TP-E1
µ
PA2707TP-E1-AZ
µ
PA2707TP-E2
Power HSOP8
Power HSOP8
FEATURES
•
Low on-state resistance
R
DS(on)1
= 4.3 mΩ MAX. (V
GS
= 10 V, I
D
= 9.0 A)
R
DS(on)2
= 5.6 mΩ MAX. (V
GS
= 4.5 V, I
D
= 9.0 A)
•
Low C
iss
: C
iss
= 6600 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•
Small and surface mount package (Power HSOP8)
µ
PA2707TP-E2-AZ
Note
Power HSOP8
Note
Pb-free (This product does not contain Pb in
external electrode.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
±20
±42
±76
40
4.3
150
−55
to +150
19
36
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW =10 sec
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
L = 100
µ
H, V
GS
= 20
→
0 V
THERMAL RESISTANCE
Channel to Ambient
Channel to Case
Note
R
th(ch-A)
R
th(ch-C)
96.2
3.13
°C/W
°C/W
Note
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17035EJ1V0DS00 (1st edition)
Date Published June 2005 NS CP(K)
Printed in Japan
2004
µ
PA2707TP
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, All terminals are connected.)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±
20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 15 V, I
D
= 10 A
V
GS
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
10
±100
UNIT
µ
A
nA
V
S
1.0
12
3.3
4.1
6600
970
530
24
29
130
39
2.5
Drain to Source On-state Resistance
4.3
5.6
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Gate Resistance
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
R
G
V
DD
= 15 V
V
GS
= 5 V
I
D
= 19 A
I
F
= 19 A, V
GS
= 0 V
I
F
= 19 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
f = 1 MHz
52
16
18
0.8
42
41
1.2
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet G17035EJ1V0DS
µ
PA2707TP
TYPICAL CHARACTERISTICS (T
A
= 25°C)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
I
D(pulse)
I
D(DC)
Li
= mit
10 ed
V)
PW
=
dT - Percentage of Rated Power - %
10
0
µ
s
r
we
Po
100
ip
ss
Di
I
D
- Drain Current - A
R
(a
D S ( o
t V
n)
G
S
10
80
60
40
20
1 ms
ite
m
Li
d
at
io
n
10 ms
1
DC
0
20
40
60
80
100
120 140
160
0.1
0.01
T
C
= 25°C
Single pulse
0.1
1
10
100
T
C
- Case Temperature -
˚C
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
R
t h(ch-A)
= 96.2°C/W
100
10
R
t h(ch-C)
= 3.13°C/W
1
0.1
Single pulse
R
t h(ch-A )
: M ount ed on galass epoxy board of 1 inch x 1 inch x 0.8 mm, T
A
= 25°C
R
t h(ch-C)
: T
C
= 25°C
0.01
100
µ
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
80
V
GS
= 10 V
60
I
D
- Drain Current - A
100
10
4.5 V
I
D
- Drain Current - A
40
1
T
ch
=
−55°C
25°C
75°C
150°C
20
Pulsed
0
0
0.1
0.2
0.3
0.4
0.5
V
DS
- Drain to Source Voltage - V
0.1
Pulsed
V
DS
= 10 V
0.01
0
1
2
3
4
5
V
GS
- Gate to Source Voltage - V
Data Sheet G17035EJ1V0DS
3
µ
PA2707TP
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
| y
fs
| - Forward Transfer Admittance - S
V
GS(off)
- Gate Cut-off Voltage - V
100
T
ch
=
−
55°C
25°C
75°C
150°C
2
10
1
V
DS
= 10 V
Pulsed
0
-50
0
50
100
150
T
ch
- Channel Temperature -
°C
1
V
DS
= 10 V
Pulsed
0.1
0.01
0.1
1
10
100
I
D
- Drain Current - A
15
Pulsed
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
15
I
D
= 10 A
Pulsed
10
10
5
V
GS
= 4.5 V
10 V
5
0
0.1
1
10
100
I
D
- Drain Current - A
0
0
5
10
15
20
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10
C
iss
, C
oss
, C
rss
- Capacitance - pF
10000
C
iss
8
6
V
GS
= 4.5 V
4
2
0
-50
0
50
100
150
T
ch
- Channel Temperature - °C
1000
C
oss
C
rss
100
V
GS
= 0 V
f = 1 MHz
10
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
10 V
I
D
= 10 A
Pulsed
4
Data Sheet G17035EJ1V0DS
µ
PA2707TP
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
30
6
V
GS
- Gate to Source Voltage - V
t
d(of f)
100
t
f
5
20
V
DD
= 24 V
15 V
6V
4
3
10
V
DS
0
0
10
20
30
40
50
Q
G
- Gate Charge - nC
V
GS
10
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
Ω
0.1
1
10
t
d(on)
t
r
2
1
0
1
100
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
t
rr
- Reverse Recovery Time - ns
1000
I
F
- Diode Forward Current - A
V
GS
= 10 V
10
0V
1
100
10
di/dt = 100 A/
µ
s
V
GS
= 0 V
1
0.1
1
10
100
0.1
Pulsed
0
0.2
0.4
0.6
0.8
1
1.2
0.01
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
I
AS
- Single Avalanche Current - A
120
Energy Derating Factor - %
I
AS
= 19 A
10
E
AS
= 36 mJ
100
80
60
40
20
0
V
DD
= 15 V
R
G
= 25
Ω
V
GS
= 20
→
0 V
I
AS
≤
19 A
1
V
DD
= 15 V
R
G
= 25
Ω
V
GS
= 20
→
0 V
Starting T
ch
= 25°C
0.1
1
10
0.1
0.01
25
50
75
100
125
150
L - Inductive Load - mH
Starting T
ch
- Starting Channel Temperature - °C
Data Sheet G17035EJ1V0DS
5
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