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PDTC115TK

Description
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, PLASTIC, SC-59A, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size72KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PDTC115TK Overview

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, PLASTIC, SC-59A, 3 PIN, BIP General Purpose Small Signal

PDTC115TK Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
PDTC115T series
NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = open
Rev. 04 — 17 February 2005
Product data sheet
1. Product profile
1.1 General description
NPN resistor-equipped transistors.
Table 1:
Product overview
Package
Philips
PDTC115TE
PDTC115TK
PDTC115TM
PDTC115TS
[1]
PDTC115TT
PDTC115TU
[1]
Type number
PNP complement
JEITA
SC-75
SC-59A
SC-101
SC-43A
-
SC-70
PDTA115TE
PDTA115TK
PDTA115TM
PDTA115TS
PDTA115TT
PDTA115TU
SOT416
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
s
Built-in bias resistor
s
Simplifies circuit design
s
Reduces component count
s
Reduces pick and place costs
1.3 Applications
s
General-purpose switching and
amplification
s
Inverter and interface circuits
s
Circuit drivers
1.4 Quick reference data
Table 2:
Symbol
V
CEO
I
O
R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
Conditions
open base
Min
-
-
70
Typ
-
-
100
Max
50
100
130
Unit
V
mA
kΩ

PDTC115TK Related Products

PDTC115TK PDTC115TS126 PDTC115TS PDTC115TU 934058805115
Description TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, PLASTIC, SC-59A, 3 PIN, BIP General Purpose Small Signal Bipolar Transistors - Pre-Biased TRANS BISS AMMO LARGE TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN
Configuration SINGLE WITH BUILT-IN RESISTOR Single SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Is it Rohs certified? conform to - conform to conform to -
Maker NXP - NXP NXP NXP
Parts packaging code SOT-23 - TO-92 SC-70 -
package instruction SMALL OUTLINE, R-PDSO-G3 - CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 - 3 3 -
Reach Compliance Code unknown - unknown compliant unknown
ECCN code EAR99 - EAR99 EAR99 EAR99
Other features BUILT IN BIAS RESISTOR - BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR
Maximum collector current (IC) 0.1 A - 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V - 50 V 50 V 50 V
Minimum DC current gain (hFE) 100 - 100 100 100
JESD-30 code R-PDSO-G3 - O-PBCY-T3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 - e3 e3 -
Number of components 1 - 1 1 1
Number of terminals 3 - 3 3 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - ROUND RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - CYLINDRICAL SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN - NPN NPN NPN
Maximum power dissipation(Abs) 0.25 W - 0.5 W 0.2 W -
Certification status Not Qualified - Not Qualified Not Qualified -
surface mount YES - NO YES YES
Terminal surface TIN - TIN Tin (Sn) -
Terminal form GULL WING - THROUGH-HOLE GULL WING GULL WING
Terminal location DUAL - BOTTOM DUAL DUAL
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON
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