PDTC115T series
NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = open
Rev. 04 — 17 February 2005
Product data sheet
1. Product profile
1.1 General description
NPN resistor-equipped transistors.
Table 1:
Product overview
Package
Philips
PDTC115TE
PDTC115TK
PDTC115TM
PDTC115TS
[1]
PDTC115TT
PDTC115TU
[1]
Type number
PNP complement
JEITA
SC-75
SC-59A
SC-101
SC-43A
-
SC-70
PDTA115TE
PDTA115TK
PDTA115TM
PDTA115TS
PDTA115TT
PDTA115TU
SOT416
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
s
Built-in bias resistor
s
Simplifies circuit design
s
Reduces component count
s
Reduces pick and place costs
1.3 Applications
s
General-purpose switching and
amplification
s
Inverter and interface circuits
s
Circuit drivers
1.4 Quick reference data
Table 2:
Symbol
V
CEO
I
O
R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
Conditions
open base
Min
-
-
70
Typ
-
-
100
Max
50
100
130
Unit
V
mA
kΩ
Philips Semiconductors
PDTC115T series
NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = open
2. Pinning information
Table 3:
Pin
SOT54
1
2
3
input (base)
output (collector)
GND (emitter)
1
2
3
001aab347
006aaa218
R1
Pinning
Description
Simplified outline
Symbol
2
1
3
SOT54A
1
2
3
input (base)
output (collector)
GND (emitter)
1
2
3
001aab348
006aaa218
R1
2
1
3
SOT54 variant
1
2
3
input (base)
output (collector)
GND (emitter)
1
2
3
001aab447
006aaa218
R1
2
1
3
SOT23, SOT323, SOT346, SOT416
1
2
3
input (base)
GND (emitter)
output (collector)
1
1
2
006aaa144
sym012
3
R1
3
2
SOT883
1
2
3
input (base)
GND (emitter)
output (collector)
1
3
2
Transparent
top view
1
R1
3
2
sym012
9397 750 14021
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 17 February 2005
2 of 10
Philips Semiconductors
PDTC115T series
NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = open
3. Ordering information
Table 4:
Ordering information
Package
Name
PDTC115TE
PDTC115TK
PDTC115TM
PDTC115TS
[1]
PDTC115TT
PDTC115TU
[1]
Type number
Description
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
leadless ultra small plastic package; 3 solder lands;
body 1.0
×
0.6
×
0.5 mm
plastic single-ended leaded (through hole) package;
3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
Version
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
SC-75
SC-59A
SC-101
SC-43A
-
SC-70
Also available in SOT54A and SOT54 variant packages (see
Section 2
and
Section 9).
4. Marking
Table 5:
Marking codes
Marking code
[1]
17
28
G5
TC115T
*AK
*17
Type number
PDTC115TE
PDTC115TK
PDTC115TM
PDTC115TS
PDTC115TT
PDTC115TU
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
9397 750 14021
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 17 February 2005
3 of 10
Philips Semiconductors
PDTC115T series
NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = open
5. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
T
stg
T
j
T
amb
[1]
[2]
[3]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
Max
50
50
5
100
100
150
250
250
500
250
200
+150
150
+150
Unit
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
°C
°C
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
[1]
[1]
[2] [3]
[1]
[1]
[1]
-
-
-
-
-
-
−65
-
−65
storage temperature
junction temperature
ambient temperature
Refer to standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60
µm
copper strip line.
6. Thermal characteristics
Table 7:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
[1]
[2]
[3]
Refer to standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60
µm
copper strip line.
Conditions
in free air
[1]
[1]
[2] [3]
[1]
[1]
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
-
-
833
500
500
250
500
625
K/W
K/W
K/W
K/W
K/W
K/W
9397 750 14021
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 17 February 2005
4 of 10
Philips Semiconductors
PDTC115T series
NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = open
7. Characteristics
Table 8:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
I
CEO
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
bias resistor 1 (input)
collector capacitance
I
E
= i
e
= 0 A; V
CB
= 10 V;
f = 1 MHz
Conditions
V
CB
= 50 V; I
E
= 0 A
V
CE
= 30 V; I
B
= 0 A
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150
°C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 1 mA
I
C
= 5 mA; I
B
= 0.25 mA
Min
-
-
-
-
100
-
70
-
Typ
-
-
-
-
-
-
100
-
Max
100
1
50
100
-
150
130
2.5
mV
kΩ
pF
Unit
nA
µA
µA
nA
I
EBO
h
FE
V
CEsat
R1
C
c
10
3
006aaa058
1
006aaa059
h
FE
(1)
V
CEsat
(V)
(2)
10
−1
(3)
(1)
(2)
(3)
10
2
10
−1
1
10
I
C
(mA)
10
2
10
−2
10
−1
1
10
I
C
(mA)
10
2
V
CE
= 5 V
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
I
C
/I
B
= 20
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
9397 750 14021
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 17 February 2005
5 of 10
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