DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2707GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The
µ
PA2707GR is N-channel MOS Field Effect
Transistor designed for DC/DC converter and power
management applications of notebook computer.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
Note
µ
PA2707GR-E1
µ
PA2707GR-E1-A
Power SOP8
Power SOP8
FEATURES
•
Low on-state resistance
R
DS(on)1
= 4.3 mΩ MAX. (V
GS
= 10 V, I
D
= 9.0 A)
R
DS(on)2
= 5.6 mΩ MAX. (V
GS
= 4.5 V, I
D
= 9.0 A)
•
Low C
iss
: C
iss
= 6600 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•
Small and surface mount package (Power SOP8)
µ
PA2707GR-E2
µ
PA2707GR-E2-A
Note
Power SOP8
Note
Pb-free (This product does not contain Pb in
external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
±20
±19
±76
1.1
2.5
150
−55
to +150
19
36
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation
Channel Temperature
Storage Temperature
Total Power Dissipation (PW = 10 sec)
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
L = 100
µ
H, V
GS
= 20
→
0 V
THERMAL RESISTANCE
Channel to Ambient
Note
Note
R
th(ch-A)
R
th(ch-L)
114
22
°C/W
°C/W
Channel to Drain Lead
Note
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17032EJ1V0DS00 (1st edition)
Date Published June 2005 NS CP(K)
Printed in Japan
2004
µ
PA2707GR
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, All terminals are connected.)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±
20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 15 V, I
D
= 10 A
V
GS
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
10
±100
UNIT
µ
A
nA
V
S
1.0
12
3.3
4.1
6600
970
530
24
29
130
39
2.5
Drain to Source On-state Resistance
4.3
5.6
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Gate Resistance
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
R
G
V
DD
= 15 V
V
GS
= 5 V
I
D
= 19 A
I
F
= 19 A, V
GS
= 0 V
I
F
= 19 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
f = 1 MHz
52
16
18
0.8
42
41
1.2
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet G17032EJ1V0DS
µ
PA2707GR
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
dT - Percentage of Rated Power - %
FORWARD BIAS SAFE OPERATING AREA
100
I
D(pulse)
I
D(DC)
PW
=
10
0
100
µ
s
10
I
D
- Drain Current - A
80
60
40
20
0
1
d
ite )
m 0V
Li 1
n)
(o S
=
S
R
D
t V
G
(a
1 ms
Po
we
r
Di
ss
ip
10 ms
at
io
n
Li
m
ite
d
100 ms
0.1
0
20
40
60
80
100
120 140 160
0.01
0.01
T
A
= 25°C
Single pulse
Mounted on glass epoxy board of
1 inch x 1 inch x 0.8 mm
10 s
0.1
1
10
100
T
A
- Ambient Temperature -
˚C
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 114ºC/W
100
10
1
0.1
Single pulse
Mounted on galass epoxy board of 1 inch x 1 inch x 0.8 mm, T
A
= 25 ºC
0.01
100
µ
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
80
V
GS
= 10 V
60
I
D
- Drain Current - A
100
10
4.5 V
I
D
- Drain Current - A
40
1
T
ch
=
−55°C
25°C
75°C
150°C
20
Pulsed
0
0
0.1
0.2
0.3
0.4
0.5
V
DS
- Drain to Source Voltage - V
0.1
Pulsed
V
DS
= 10 V
0.01
0
1
2
3
4
5
V
GS
- Gate to Source Voltage - V
Data Sheet G17032EJ1V0DS
3
µ
PA2707GR
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
| y
fs
| - Forward Transfer Admittance - S
V
GS(off)
- Gate Cut-off Voltage - V
100
T
ch
=
−
55°C
25°C
75°C
150°C
2
10
1
V
DS
= 10 V
Pulsed
0
-50
0
50
100
150
T
ch
- Channel Temperature -
°C
1
V
DS
= 10 V
Pulsed
0.1
0.01
0.1
1
10
100
I
D
- Drain Current - A
15
Pulsed
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
15
I
D
= 10 A
Pulsed
10
10
5
V
GS
= 4.5 V
10 V
5
0
0.1
1
10
100
I
D
- Drain Current - A
0
0
5
10
15
20
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10
C
iss
, C
oss
, C
rss
- Capacitance - pF
10000
C
iss
8
6
V
GS
= 4.5 V
4
2
0
-50
0
50
100
150
T
ch
- Channel Temperature - °C
1000
C
oss
C
rss
100
V
GS
= 0 V
f = 1 MHz
10
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
10 V
I
D
= 10 A
Pulsed
4
Data Sheet G17032EJ1V0DS
µ
PA2707GR
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
30
6
V
GS
- Gate to Source Voltage - V
t
d(of f)
100
t
f
5
20
V
DD
= 24 V
15 V
6V
4
3
10
V
DS
0
0
10
20
30
40
50
Q
G
- Gate Charge - nC
V
GS
10
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
Ω
0.1
1
10
t
d(on)
t
r
2
1
0
1
100
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
t
rr
- Reverse Recovery Time - ns
1000
I
F
- Diode Forward Current - A
V
GS
= 10 V
10
0V
1
100
10
di/dt = 100 A/
µ
s
V
GS
= 0 V
1
0.1
1
10
100
0.1
Pulsed
0
0.2
0.4
0.6
0.8
1
1.2
0.01
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
I
AS
- Single Avalanche Current - A
120
Energy Derating Factor - %
I
AS
= 19 A
10
E
AS
= 36 mJ
100
80
60
40
20
0
V
DD
= 15 V
R
G
= 25
Ω
V
GS
= 20
→
0 V
I
AS
≤
19 A
1
V
DD
= 15 V
R
G
= 25
Ω
V
GS
= 20
→
0 V
Starting T
ch
= 25°C
0.1
1
10
0.1
0.01
25
50
75
100
125
150
L - Inductive Load - mH
Starting T
ch
- Starting Channel Temperature - °C
Data Sheet G17032EJ1V0DS
5
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