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UPA2707GR-E1-A

Description
SWITCHING N-CHANNEL POWER MOSFET
File Size137KB,7 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA2707GR-E1-A Overview

SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2707GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The
µ
PA2707GR is N-channel MOS Field Effect
Transistor designed for DC/DC converter and power
management applications of notebook computer.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
Note
µ
PA2707GR-E1
µ
PA2707GR-E1-A
Power SOP8
Power SOP8
FEATURES
Low on-state resistance
R
DS(on)1
= 4.3 mΩ MAX. (V
GS
= 10 V, I
D
= 9.0 A)
R
DS(on)2
= 5.6 mΩ MAX. (V
GS
= 4.5 V, I
D
= 9.0 A)
Low C
iss
: C
iss
= 6600 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Small and surface mount package (Power SOP8)
µ
PA2707GR-E2
µ
PA2707GR-E2-A
Note
Power SOP8
Note
Pb-free (This product does not contain Pb in
external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
±20
±19
±76
1.1
2.5
150
−55
to +150
19
36
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation
Channel Temperature
Storage Temperature
Total Power Dissipation (PW = 10 sec)
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
I
AS
E
AS
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
L = 100
µ
H, V
GS
= 20
0 V
THERMAL RESISTANCE
Channel to Ambient
Note
Note
R
th(ch-A)
R
th(ch-L)
114
22
°C/W
°C/W
Channel to Drain Lead
Note
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17032EJ1V0DS00 (1st edition)
Date Published June 2005 NS CP(K)
Printed in Japan
2004

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