DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2701TP
SWITCHING
N-CHANNEL POWER MOS FET
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
The
µ
PA2701TP, which has a heat spreader, is N-Channel
MOS Field Effect Transistor designed for DC/DC converter and
power management applications of notebook computers.
1.49 ±0.21
1.44 TYP.
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8, 9 ; Drain
1
5.2
+0.17
–0.2
4
6.0 ±0.3
0.8 ±0.2
+0.10
–0.05
FEATURES
•
Low on-state resistance
R
DS(on)1
= 7.5 mΩ MAX. (V
GS
= 10 V, I
D
= 7.0 A)
R
DS(on)2
= 11.6 mΩ MAX. (V
GS
= 4.5 V, I
D
= 7.0 A)
•
Low C
iss
: C
iss
= 1200 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•
Small and surface mount package (Power HSOP8)
4.4 ±0.15
S
0.05 ±0.05
0.15
1.27 TYP.
0.40
+0.10
–0.05
1.1 ±0.2
0.10 S
0.12 M
1
4
2.0 ±0.2
2.9 MAX.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power HSOP8
8
9
4.1 MAX.
µ
PA2701TP
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, Unless otherwise noted, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note2
Note1
V
DSS
V
GSS
I
D(DC)1
I
D(DC)2
I
D(pulse)
P
T1
Note1
30
±20
±35
±16
±80
28
3
150
–55 to +150
18
32.4
V
V
A
A
A
W
W
°C
°C
A
mJ
Gate
Protection
Diode
Source
Gate
Drain
EQUIVALENT CIRCUIT
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
Body
Diode
P
T2
T
ch
T
stg
I
AS
E
AS
Notes 1.
Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
2.
PW
≤
10
µ
s, Duty Cycle
≤
1%
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
L = 100
µ
H, V
GS
= 20
→
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is extemally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G15844EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
2002
µ
PA2701TP
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, Unless otherwise noted, All terminals are connected.)
CHARACTERISTICS
Zero Gate Voltage Drain Current
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
=
15
V
V
GS
=
5
V
I
D
= 14 A
I
F
= 14 A, V
GS
= 0 V
I
F
= 14 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±
20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 7.0 A
V
GS
= 10 V, I
D
= 7.0 A
V
GS
= 4.5 V, I
D
= 7.0 A
V
GS
= 4.0 V, I
D
= 7.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 15 V, I
D
= 7.0 A
V
GS
= 10 V
R
G
= 10
Ω
1.5
7
2.0
14
6.2
8.7
10.3
1200
500
160
10
13
44
11
12
4
6
0.8
32
27
1.2
7.5
11.6
13.7
MIN.
TYP.
MAX.
10
±10
2.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
5
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
=
−20 →
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet G15844EJ2V0DS
µ
PA2701TP
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
30
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
100
80
60
40
20
P
T
- Total Power Dissipation - W
20
40
60
80
100
120 140
160
25
20
15
10
5
0
0
20
40
60
80
100 120 140
160
T
C
- Case Temperature - ˚C
0
T
C
- Case Temperature -
˚C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D
- Drain Current - A
100
I
D(pulse) =
80 A
PW
d
ite V)
I
D(DC) =
35 A
Lim 10
=
n)
o
S( GS
R
D
t V
Power Dissipation Limited
(a
100 ms
=
1
10
10
m
s
m
s
1
T
C
= 25˚C
Single Pulse
0.1
0.01
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance - ˚C/W
1000
Remark
R
th(ch-A)
:
Mounted on a glass epoxy board
(1 inch x 1 inch x 0.8 mm), T
A
= 25˚C
R
th(ch-C)
:
T
C
= 25˚C
R
th(ch-A)
= 89.3˚C/W
100
10
R
th(ch-C)
= 4.46˚C/W
1
0.1
0.0001
Single Pulse
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Data Sheet G15844EJ2V0DS
3
µ
PA2701TP
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
80
70
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
- Drain Current - A
I
D
- Drain Current - A
10
60
50
40
30
20
10
V
GS
= 10 V
4.5 V
1
T
A
=
−25˚C
25˚C
75˚C
150˚C
4.0 V
0.1
0.01
1
2
3
V
DS
= 10 V
4
5
0
0
Pulsed
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
| y
fs
| - Forward Transfer Admittance - S
100
V
DS
= 10 V
Pulsed
R
DS(on)
- Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
I
D
= 7.0 A
10
1
T
A
= 150˚C
75˚C
25˚C
−25˚C
0.1
0.01
0.1
1
10
100
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
Pulsed
3
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
DS
= 10 V
I
D
= 1 mA
20
V
GS(off)
- Gate Cut-off Voltage - V
10
100
2
V
GS
= 4.0 V
10
4.5 V
10 V
0
0.01
1
0.1
1
I
D
- Drain Current - A
0
−50 −25
0
25
50
75
100 125 150
T
ch
- Channel Temperature - ˚C
4
Data Sheet G15844EJ2V0DS
µ
PA2701TP
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
Pulsed
15
V
GS
= 4 V
4.5 V
10
10 V
5
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
V
GS
= 0 V
I
SD
- Diode Forward Current - A
10
1
0.1
0
−50 −25
0.01
0
25
50
75
100 125 150 175
0
0.2
0.4
0.6
0.8
1.0
1.2
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10000
100
SWITCHING CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
t
d(off)
t
f
t
r
10
t
d(on)
1000
C
iss
C
oss
100
C
rss
10
0.1
V
GS
= 0 V
f = 1 MHz
1
10
100
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
Ω
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
V
DS
- Drain to Source Voltage - V
t
rr
- Reverse Recovery Time - ns
30
25
20
15
10
5
0
0
100
V
DD
= 24 V
15 V
6V
V
GS
6
5
4
3
2
V
DS
I
D
= 14 A
1
10
12
14
16
18
0
20
10
1
0.1
1
10
100
2
4
6
8
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
di/dt = 100 A/
µ
s
V
GS
= 0 V
8
7
35
Data Sheet G15844EJ2V0DS
5
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