DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2510
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA2510, which has a heat spreader, is P-channel
applications of notebook computers.
0.65 TYP.
PACKAGE DRAWING (Unit: mm)
MOS Field Effect Transistor designed for power management
FEATURES
spreader. The land size is same as 8-pin TSSOP.
•
Low on-state resistance
R
DS(on)1
= 10.1 mΩ MAX. (V
GS
=
−10.0
V, I
D
=
−9.0
A)
R
DS(on)2
= 14.0 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−9.0
A)
•
Low C
iss
: 3000 pF TYP. (V
DS
=
−10.0
V, V
GS
= 0 V)
+0.05
0.25
−0.05
0.10 M
•
µ
PA2510 has a thin surface mount package with a heat
+0.1
1
2
3
4
5.8
±0.1
6.4
±0.1
8
7
6
5
3.15
±0.15
3
±0.1
0.17
±0.05
0.8 MAX.
0.10 S
ORDERING INFORMATION
PART NUMBER
PACKAGE
8PIN HWSON
0
−0
µ
PA2510TM
0.75
±0.15
2.2
±0.2
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
4.15
±0.2
0.85
±0.15
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Note2
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
−30.0
m20.0
m18.0
m72.0
2.7
150
−55
to +150
−18.0
32.4
V
V
A
A
W
°C
°C
A
mJ
Gate
Protection
Diode
Source
Gate
Body
Diode
Drain Current (pulse)
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Note3
I
AS
E
AS
Single Avalanche Energy
Note3
2
Notes 1.
Mounted on FR-4 board of 25 cm x 1.6 mm, PW
≤
10 sec
2.
PW
≤
10
µ
s, Duty Cycle
≤
1%
3.
Starting T
ch
= 25°C, V
DD
=
−30
V, R
G
= 25
Ω,
V
GS
=
−20.0 →
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16683EJ1V0DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
2003
µ
PA2510
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
=
−30.0
V, V
GS
= 0 V
V
GS
=
m20.0
V, V
DS
= 0 V
V
DS
=
−10.0
V, I
D
=
−1.0
mA
V
DS
=
−10.0
V, I
D
=
−9.0
A
V
GS
=
−10.0
V, I
D
=
−9.0
A
V
GS
=
−4.5
V, I
D
=
−9.0
A
V
DS
=
−10.0
V
V
GS
= 0 V
f = 1.0 MHz
V
DD
=
−15.0
V, I
D
=
−9.0
A
V
GS
=
−10.0
V
R
G
= 10
Ω
MIN.
TYP.
MAX.
−1.0
m10.0
UNIT
µ
A
µ
A
V
S
−1.0
12
7.5
9.5
3000
940
500
12
18
270
170
−2.5
Drain to Source On-state Resistance
10.1
14.0
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
=
−24.0
V
V
GS
=
−10.0
V
I
D
=
−18.0
A
I
F
= 18.0 A, V
GS
= 0 V
I
F
= 18.0 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
70
8
22
0.85
80
68
Note
Pulsed: PW
≤
350
µ
s, Duty Cycle
≤
2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
=
−20 →
0 V
−
I
D
V
DD
50
Ω
L
V
DD
PG.
BV
DSS
V
DS
V
GS
(−)
0
τ
Starting T
ch
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
R
G
V
DD
V
DS
(−)
90%
10% 10%
90%
V
GS
(−)
V
GS
Wave Form
0
10%
V
GS
90%
I
AS
V
DS
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
=
−2
mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet G16683EJ1V0DS
µ
PA2510
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3
P
T
- Total Power Dissipation - W
2.5
2
1.5
1
0.5
0
0
25
Mounted on FR-4 board of
25 cm
2
x 1.6 mm, PW
≤
10 sec
50
75
100
125
150
175
T
A
- Ambient Temperature -
°C
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
-1000
-100
-10
-1
-0.1
Single pulse
10 ms
30 ms
R
DS(on)
Limited
(at V
GS
=
−10
V) I
D(pulse)
I
D(DC)
PW = 1 ms
I
D
- Drain Current - A
10 s
Mounted on FR-4 board of 25 cm x 1.6 mm
2
-0.01
-0.1
-1
-10
-100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
1000
100
10
1
Single pulse
Mounted on FR-4 board of 25 cm
2
x 1.6 mm
0.1
1m
10 m
100 m
1
10
PW - Pulse Width - s
100
1000
Data Sheet G16683EJ1V0DS
3
µ
PA2510
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
-80
Pulsed
V
GS
=
−10.0
V
I
D
- Drain Current - A
-100
-10
-1
-0.1
-0.01
V
DS
=
−
10.0 V
Pulsed
T
A
= 125°C
75°C
25°C
−
25°C
I
D
- Drain Current - A
-60
−4.5
V
-40
-20
0
0
-0.2
-0.4
-0.6
-0.8
-1
V
DS
- Drain to Source Voltage - V
-0.001
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
-2
V
GS(off)
- Gate Cut-off Voltage - V
100
-1.8
-1.6
-1.4
-1.2
-1
-0.8
-50
0
50
V
DS
=
−10.0
V
I
D
=
−1.0
mA
V
DS
=
−10.0
V
Pulsed
10
T
A
=
−25°C
25°C
75°C
125°C
1
0.1
100
150
0.01
-0.01
-0.1
-1
-10
-100
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
25
Pulsed
20
15
10
5
0
-0.1
25
20
15
10
5
0
0
-5
-10
-15
-20
V
GS
- Gate to Source Voltage - V
I
D
=
−9.0
A
Pulsed
V
GS
=
−4.5
V
−10.0
V
-1
-10
-100
I
D
- Drain Current - A
4
Data Sheet G16683EJ1V0DS
µ
PA2510
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
25
20
15
10
5
0
-50
0
50
100
150
T
ch
- Channel Temperature - °C
C
iss
, C
oss
, C
rss
- Capacitance - pF
10000
I
D
=
−9.0
A
Pulsed
V
GS
= 0 V
f = 1.0 MHz
C
iss
V
GS
=
−4.5
V
−10.0
V
1000
C
oss
C
rss
100
-0.1
-1
-10
-100
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
1000
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
-10
t
d(off)
100
t
f
-8
-6
-4
-2
0
0
V
DD
=
−
24.0 V
I
D
=
−
18.0 A
t
r
10
t
d(on)
V
DD
=
−15.0
V
V
GS
=
−10.0
V
R
G
= 10
Ω
1
-0.1
-1
-10
-100
10
20
30
40
50
60
70
80
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
I
AS
- Single Avalanche Current - A
I
F
- Diode Forward Current - A
-100
V
GS
= 0 V
Pulsed
10
I
AS
=
−18.0
A
-10
E
AS
= 32.4 mJ
1
-1
0.1
V
DD
=
−15.0
V
R
G
= 25
Ω
V
GS
=
−20.0 →
0 V
Starting T
ch
= 25°C
0.1
1
10
0.01
0.4
0.6
0.8
1
1.2
V
F(S-D)
- Source to Drain Voltage - V
-0.1
0.01
L - Inductive Load - mH
Data Sheet G16683EJ1V0DS
5
京公网安备 11010802033920号
EEWORLD
