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UPA2510

Description
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size146KB,7 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA2510 Overview

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2510
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA2510, which has a heat spreader, is P-channel
applications of notebook computers.
0.65 TYP.
PACKAGE DRAWING (Unit: mm)
MOS Field Effect Transistor designed for power management
FEATURES
spreader. The land size is same as 8-pin TSSOP.
Low on-state resistance
R
DS(on)1
= 10.1 mΩ MAX. (V
GS
=
−10.0
V, I
D
=
−9.0
A)
R
DS(on)2
= 14.0 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−9.0
A)
Low C
iss
: 3000 pF TYP. (V
DS
=
−10.0
V, V
GS
= 0 V)
+0.05
0.25
−0.05
0.10 M
µ
PA2510 has a thin surface mount package with a heat
+0.1
1
2
3
4
5.8
±0.1
6.4
±0.1
8
7
6
5
3.15
±0.15
3
±0.1
0.17
±0.05
0.8 MAX.
0.10 S
ORDERING INFORMATION
PART NUMBER
PACKAGE
8PIN HWSON
0
−0
µ
PA2510TM
0.75
±0.15
2.2
±0.2
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
4.15
±0.2
0.85
±0.15
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Note2
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
−30.0
m20.0
m18.0
m72.0
2.7
150
−55
to +150
−18.0
32.4
V
V
A
A
W
°C
°C
A
mJ
Gate
Protection
Diode
Source
Gate
Body
Diode
Drain Current (pulse)
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Note3
I
AS
E
AS
Single Avalanche Energy
Note3
2
Notes 1.
Mounted on FR-4 board of 25 cm x 1.6 mm, PW
10 sec
2.
PW
10
µ
s, Duty Cycle
1%
3.
Starting T
ch
= 25°C, V
DD
=
−30
V, R
G
= 25
Ω,
V
GS
=
−20.0 →
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16683EJ1V0DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
2003

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