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BR801

Description
Bridge Rectifier Diode, 8A, 100V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size68KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

BR801 Overview

Bridge Rectifier Diode, 8A, 100V V(RRM),

BR801 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current125 A
Number of components4
Maximum operating temperature125 °C
Maximum output current8 A
Maximum repetitive peak reverse voltage100 V
surface mountNO
BL
FEATURES
GALAXY ELECTRICAL
BR8005 - - - BR810
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 8.0 A
SILICON BRIDGE RECTIFIERS
Rating to 1000V PRV
Surge overload rating to 125 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Mounting: thru hole for # 6 screw
mounting
BR8
.520(13.21)
.480(12.19)
.150
.140
.770(19.558)
.730(18.542)
.042(1.07)
.038(0.97)
.750(19.1)MIN
.275± .025
(6.99± .64)
Polarity shown on side of case;
Positive lead by beveled corner.
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BR8005 BR801 BR802 BR804 BR806 BR808 BR810 UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
output current
@T
A
=50
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
8.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at
4.0
A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
125.0
A
V
F
I
R
T
J
T
STG
1.1
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
V
μ
A
mA
Operating junction temperature range
Storage temperature range
www.galaxycn.com
Document Number 0287036
BL
GALAXY ELECTRICAL
1.

BR801 Related Products

BR801 BR806 BR808
Description Bridge Rectifier Diode, 8A, 100V V(RRM), Bridge Rectifier Diode, 8A, 600V V(RRM), Bridge Rectifier Diode, 8A, 800V V(RRM),
Is it Rohs certified? conform to conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code unknown unknown unknown
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 125 A 125 A 125 A
Number of components 4 4 4
Maximum operating temperature 125 °C 125 °C 125 °C
Maximum output current 8 A 8 A 8 A
Maximum repetitive peak reverse voltage 100 V 600 V 800 V
surface mount NO NO NO
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