EEWORLDEEWORLDEEWORLD

Part Number

Search

UPA1918TE

Description
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size65KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
Download Datasheet Compare View All

UPA1918TE Overview

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1918
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1918 is a switching device, which can be driven
directly by a 4.0 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.32
+0.1
–0.05
0.65
–0.15
+0.1
0.16
+0.1
–0.06
2.8 ±0.2
6
5
4
1.5
FEATURES
4.0 V drive available
Low on-state resistance
R
DS(on)1
= 143 mΩ MAX. (V
GS
= –10 V, I
D
= –2.0 A)
R
DS(on)2
= 179 mΩ MAX. (V
GS
= –4.5 V, I
D
= –2.0 A)
R
DS(on)3
= 190 mΩ MAX. (V
GS
= –4.0 V, I
D
= –2.0 A)
0 to 0.1
1
2
3
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-95 (Mini Mold Thin Type)
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
µ
PA1918TE
Marking: TS
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
EQUIVALENT CIRCUIT
–60
m20
m3.5
m14
0.2
2.0
150
–55 to +150
V
V
A
A
W
W
°C
°C
Gate
Protection
Diode
Gate
Body
Diode
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Mounted on FR-4 board, t
5 sec.
Note2
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G15926EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
©
2002

UPA1918TE Related Products

UPA1918TE UPA1918
Description P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
57 things you should know when you are a DSP (Part 2)
35. What is the function of GEL file? The function of GEL file is basically the same as that of emuinit.cmd, which is used to initialize DSP. But its function is more powerful than that of emuinit. GE...
shun DSP and ARM Processors
I would like to ask which other manufacturers have single-pole TMR switches, except MDT (only a model, but out of stock)?
I would like to ask which manufacturers have unipolar TMR (tunneling effect) switches, except for MDT (only a model, but out of stock)?...
一沙一世 stm32/stm8
good reference for PLL
very good article for synthesizer design...
tedwu0508 Analog electronics
Internal training materials for Hyundai's vehicle-mounted sonar
Just as the title says....
5525 Automotive Electronics
Switching power supply feedback voltage and follower
I am working on a switching power supply recently. It can output normally, but the load regulation rate is relatively high. I guess it is due to unstable feedback (two resistors are used for voltage d...
DIY_Clover Power technology
How to cancel a certain encryption algorithm in openssl
Hey guys, does anyone know how to cancel a certain encryption algorithm supported by openssl, such as: AES128-SHA, AES256-SHA, DES-CBC3-SHA, etc.? I compiled openssl on ubuntu, and after compiling, I ...
happylsy2012 Linux and Android

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2769  1484  2263  2549  1957  56  30  46  52  40 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号