DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1900
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1900 is a switching device which can be driven
directly by a 2.5 V power source.
The
µ
PA1900 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and
so on.
2.8 ±0.2
PACKAGE DRAWING (Unit : mm)
0.32
+0.1
–0.05
0.65
–0.15
+0.1
0.16
+0.1
–0.06
6
5
4
1.5
0 to 0.1
1
2
3
FEATURES
•
Can be driven by a 2.5 V power source
•
Low on-state resistance
R
DS(on)1
= 35 mΩ MAX. (V
GS
= 4.5 V, I
D
= 3.0 A)
R
DS(on)2
= 38 mΩ MAX. (V
GS
= 4.0 V, I
D
= 3.0 A)
R
DS(on)3
= 45 mΩ MAX. (V
GS
= 2.5 V, I
D
= 3.0 A)
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
6-pin Mini Mold (Thin Type)
EQUIVALENT CIRCUIT
Drain
µ
PA1900TE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
Note2
20
±12
±5.5
±22
0.2
2
150
–55 to +150
V
V
A
A
W
W
°C
°C
Gate
Gate
Protection
Diode
Marking: TG
Body
Diode
Source
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2.
Mounted on FR-4 Board, t
≤
5 sec.
Remark
P
T2
T
ch
T
stg
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13809EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1998, 1999
µ
PA1900
5
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
TEST CONDITIONS
V
DS
= 20 V, V
GS
= 0 V
V
GS
= ±12 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 3.0 A
V
GS
= 4.5 V, I
D
= 3.0 A
V
GS
= 4.0 V, I
D
= 3.0 A
V
GS
= 2.5 V, I
D
= 3.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 10 V
I
D
= 3.0 A
V
GS(on)
= 4.0 V
R
G
= 10
Ω
V
DS
= 16 V
I
D
= 5.5 A
V
GS
= 4.0 V
I
F
= 5.5 A, V
GS
= 0 V
0.5
3
0.93
9.2
28
29
37
595
222
133
61
172
220
293
6.7
1.2
3.1
0.87
35
38
45
MIN.
TYP.
MAX.
10
±10
1.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
R
G
= 10
Ω
V
DD
I
D
90 %
90 %
I
D
0 10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
10 %
t
f
V
GS
I
G
= 2 mA
V
GS(on)
90 %
V
GS
Wave Form
R
L
V
DD
0
10 %
PG.
50
Ω
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
I
D
Wave Form
2
Data Sheet D13809EJ1V0DS00
µ
PA1900
5
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
FORWARD BIAS SAFE OPERATING AREA
100
d
ite )
im 5 V
I
D
(pulse)
I
D
- Drain Current - A
dT - Derating Factor - %
80
10
R V
(@
)
L 4.
(on
=
DS GS
PW
=1
I
D
(
DC
)
60
1
ms
10
0m
s
5s
10
ms
40
20
0.1
Single Pulse
Mounted on 250mm
2
x 35
µ
m Copper Pad
Connected to Drain Electrode in
50mm x 50mm x 1.6mm FR-4 Board
0
30
60
90
120
150
T
A
- Ambient Temperature -
˚C
0.01
0.1
1
10
V
DS
- Drain to Source Voltage - V
100
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
V
GS
= 4.5 V
4.0 V
10
100
FORWARD TRANSFER CHARACTERISTICS
V
DS
= 10 V
I
D
- Drain Current - A
16
2.5 V
12
I
D
- Drain Current - A
1
0.1
0.01
0.001
0.0001
0.00001
T
A
= 125˚C
75˚C
8
T
A
= 25˚C
−25˚C
4
0
0.2
0.4
0.6
0.8
1.0
0
1.0
2.0
3.0
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS(off)
- Gate to Source Cut-off Voltage - V
| y
fs
| - Forward Transfer Admittance - S
1.5
V
DS
= 10 V
I
D
= 1 mA
100
V
DS
=
−10
V
10 T
A
=
−25˚C
25˚C
75˚C
125˚C
1
1.0
0.1
0.5
−50
0
50
100
150
0.01
0.01
0.1
1
10
100
T
ch
- Channel Temperature - ˚C
I
D
- Drain Current - A
Data Sheet D13809EJ1V0DS00
3
µ
PA1900
R
DS(on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
60
V
GS
= 2.5 V
R
DS(on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
50
V
GS
= 4.0 V
50
T
A
=125
°C
75
°C
40
T
A
=125
°C
75
°C
40
25
°C
−25°C
30
25
°C
−25°C
30
20
0.01
0.1
1
10
100
20
0.01
0.1
1
10
100
I
D
- Drain Current - A
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - mΩ
50
V
GS
= 4.5 V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
I
D
= 3.0 A
50
40
T
A
=125
°C
75
°C
V
GS
= 2.5 V
40
4.0 V
4.5 V
30
25
°C
−25°C
30
20
0.01
0.1
1
10
100
20
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature -
°C
R
DS(on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
I
D
= 3.0 A
80
C
iss
, C
oss
, C
rss
- Capacitance - pF
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
f = 1 MHz
V
GS
= 0 V
1000
C
iss
C
oss
100
C
rss
60
40
20
0
2
4
6
8
10
10
0.1
1
10
100
V
GS
- Gate to Source Voltage - V
V
DS
- Drain Source Voltage - V
4
Data Sheet D13809EJ1V0DS00
µ
PA1900
SWITCHING CHARACTERISTICS
1000
100
t
d(off)
t
r
100
t
d(on)
t
f
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
I
F(S-D)
- Diode Forward Current - A
10
1
10
0.1
1.0
0.1
V
DD
= 10 V
V
GS(on)
= 4.0 V
R
G
= 10
Ω
1
I
D
- Drain Current - A
10
0.01
0.4
0.6
0.8
1.0
1.2
1.4
V
F(S-D)
- Source to Drain Voltage - V
DYNAMIC INPUT CHARACTERISTICS
10
I
D
= 5.5 A
V
DS
- Drain to Source Voltage - V
8
V
DD
= 16 V
10 V
6
4
2
0
2
4
6
8
10
12
Q
G
- Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Single Pulse
r
th(t)
- Transient Thermal Resistance -
°C/W
Without Board
100
Mounted on 250mm
2
×35µm
Copper Pad
Connected to Drain Electrode
in 50mm×50mm×1.6mm FR-4 Board
10
1
0.001
0.01
0.1
1
PW - Pulse Width - s
10
100
1000
Data Sheet D13809EJ1V0DS00
5
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