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UPA1840GR-9JG

Description
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size59KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA1840GR-9JG Overview

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1840
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1840 is N-channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, and designed for high voltage
applications such as DC/DC converter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power TSSOP8
µ
PA1840GR-9JG
FEATURES
High voltage rating V
DSS
= 200 V
Power TSSOP8 package (Single circuit)
Gate voltage rating
±30
V
Low on-state resistance
R
DS(on)
= 0.5
MAX. (V
GS
= 10 V, I
D
= 1.5 A)
Low input capacitance
C
iss
= 320 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
200
±30
±2.2
±8.8
2.0
150
–55 to +150
V
V
A
A
W
°C
°C
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Mounted on ceramic substrate of 5000 mm
2
x 1.1
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G14758EJ1V0DS00 (1st edition)
Date Published November 2001 NS CP(K)
Printed in Japan
©
2000

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